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发帖数: 81 | 3 1. title :Optical properties of Si-, Ge- and Sn-doped GaN
By: Shikanai, A; Fukahori, H; Kawakami, Y; et al.
Conference: International Conference on Shallow-Level Centers in
Semiconductors Location: WARSAW, POLAND Date: 2002
PHYSICA STATUS SOLIDI B-BASIC RESEARCH Volume: 235 Issue: 1 Pages: 26-
30 Published: JAN 2003
link:
http://onlinelibrary.wiley.com/doi/10.1002/pssb.200301525/abstr
2.Calculations of acceptor ionization energies in GaN
By: Wang, F; Chen, AB
PHYSICAL REVIEW B Volu... 阅读全帖 |
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