h*******y
发帖数: 896 | 1 我的疑惑是有时看到将bandgap的输出连到pMos的source，可是从pMOS的source看过去
的等效电阻应该和bandgap的输出电阻
相比差不了多少，这样能行吗？温度一变化，bandgap输出就不稳定了吧。
bandgap is buffered (LOW Rout) before it's used as supply voltage.
温度一变化，bandgap输出就不稳定了吧。
bandgap is very stable with temp, this is what it's supposed to be; if not,
the design is bad |
|
e***b
发帖数: 53 | 2 你不停的说Widlar bandgap 的 (delta vbe /R5 ) 是恒定电流，现在你解释一下为什么这是恒定电流. (delta vbe/R5)=kT/q *ln(n)／R5, 这个电流显然和绝对温度成正比， 你不要东拉西扯，直接回答我这个问题！
不管你用什么样的bandgap结构，(delta vbe/R) 电流都是和绝对温度成正比。 利用 delta vbe 的 正温度系数 去补偿 vbe 的 负温度系数，这是bandgap的基本原理， 你连这个都不懂，还有脸在这里诡辩。 按照你的说法， Bob Pease说的 bandgap 原理是骗人的， 所有的教科书说的 bandgap 原理都是骗人的, 只有你懂，只有你说的才是真理。你狡辩的招术已经超越轮子的水平了。见过皮厚的，没见过象你这么厚颜无耻的。
你给Bob Pease 发个邮件，看看那个是不是他的网页。 你自己萎缩，以为别人和你一
样萎缩，搞个假的网页？所谓人如其名，难怪你的ID这么萎缩。
那个０.1HZ ~10Hz noise 参数你没看见？datasheet都不会看？教你怎么设计滤波器？ 象你这么蠢的，教了你, 你 |
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f*****0
发帖数: 489 | 3 " (delta vbe/R5)=kT/q *ln(n)／R5, 这个电流显然和绝对温度成正比， 你不要东拉
西扯，直接回答我这个问题！"
OK, you stated that the Delta Vbe has a temperature coefficient of +2mv/c.
how does the above equation show that?
"利用 delta vbe 的 正温度系数 去补偿 vbe 的 负温度系数，这是bandgap的基本原
理，"
it is one of the principles of a bandgap. or you wouldn't explain how the
two diode strings form a "bandgap".
你连这个都不懂，还有脸在这里诡辩。 "
按照你的说法， Bob Pease说的 bandgap 原理是骗人的， 所有的教科书说的 bandgap
原理都是骗人的, "
that's because of your moronic comprehension of what I said.
只有你懂， |
|
w*****n
发帖数: 27 | 4 在一些paper中看到用bandgap的电路来作为其他电路的supply voltage。
我的疑惑是有时看到将bandgap的输出连到pMos的source，可是从pMOS的source看过去
的等效电阻应该和bandgap的输出电阻
相比差不了多少，这样能行吗？温度一变化，bandgap输出就不稳定了吧。 |
|
f*****0
发帖数: 489 | 5
definitely. But textbooks are too expensive so I usually read datasheet
instead.
bandgap comes in many shapes and forms but lm113 is probably some of the
best examples on how bandgap voltage reference work.
so here it is.
can your bandgap textbooks tell us how it works? specifically, Q1/Q2/Q4 and
Q7/Q9?
it may help if you simplifies the schematic a little bit but I will leave
that to you. |
|
e***b
发帖数: 53 | 6 难道Bob Pease在他的那个网页上没有这么说吗？ 难道你看不懂 Bob Pease的英文? 还是你觉得我给你的那个网页是我自己搞的，假称自己是Bob Pease?
我一点不吃惊你会继 续狡辩， 你在很多版上和很多不同的人狡辩， 这是你的一贯风格。
知之为知之，不知为不知， 真知也。古人都懂这个简单的道理。你还是不明白。在每个版面上每个问题上你都是以专家的姿态出现。
<<<: but I guess we know the answer, smartie.>>>
you should say you know the answer now! don't say WE. I knew how to design a bandgap many years ago. I designed several products with on chip bandgap. all those products had been released to the market.
<< |
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f*****0
发帖数: 489 | 7 the attached schematic may help explain how the "simple diode" bandgap works.
it is essentially an unbalanced "current mirror". I1 > I2, and Vbeq1 > Vbeq2
. so the output voltage on R3, which is the Vbe differential between Q1 and
Q2, has a much lower but positive tempco.
this is what Bob Peace referred to as the "brutal force" bandgap.
you can run the bandgap much better if you input it with constant current
over the rail, by connecting the rail to a power source with a CCS or simply
with a res |
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c*u
发帖数: 916 | 8 bandgap的输出电阻是啥意思？温度一变化，bandgap reference 的确会变化 |
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f*****0
发帖数: 489 | 9
that's right. the "gap" in "bandgap" refers to the difference between two
Vbe (or Vgs in the fet world). in its simplest form, a bandgap is the
difference between two Vbe driving by two different constant current sources
. as Vbe is much more sentitive to Ibe (the current going through the
junctions) than temperature, the differential in two Vbe simply cancels out
any fluction caused by temperature. |
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e***b
发帖数: 53 | 10 well, you thought you knew everything and argue with people everywhere, especially on Living board and automobile board. Actually, many of your previous posts here including this bandgap one does not make any sense.
The theory of bandgap is: with different current density through two PN junctions( the current does not have to be constant over temperature. these two current can drift with temperature. it is ok as long as the two current sources are matched), then the voltage drop on these two p |
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e***b
发帖数: 53 | 11 你不要东拉西扯，你一直坚持delta vbe／R5 是恒定电流， 你解释一下是不是恒定电流，如果是，为什么？我都问你好几次了，你就知道东扯西扯，一直解释不了。你如果解释不了，就闭上你的臭嘴。
delta vbe = kT/q*ln(n)
d(delta vbe)/dT = k/q*ln(n)
k= 1.38*10^(-23)
q= 1.6*10^(-19)
如果正确的设置Q1和 Q2 发射极 的 比例 或者 电流密度 ，让 (R4/R5)*1n(n)=２３.
188, 你自己去算一下 d(delta vbe)/dT *(R4/R5) 是不是 +２mv/C
在Widlar bandgap 中， R4/R5 是 delta vbe 的 增益. 不管你用什么结构，总是要正确的选择这个增益，让 delta vbe * gain = +2mv/ C, 因为 vbe 的温度系数大约是 －２mv/C
不管谁问什么问题,你总是以专家的姿态出来解答，尽管你连电路的基本知识都没有。象你这种蠢东西，还是滚回你的化粪池里，别在这里误导这里的年轻人，你那个FKU bandgap 理论根本就是狗屁不通。 You |
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f*****0
发帖数: 489 | 12 think about what a bandgap is and how it works and then rethink about your
question. |
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e***b
发帖数: 53 | 13 I never saw anyone directly uses a bandgap as power supply.
You will always need a buffer.
Actually, you are talking about a voltage regulator now.
Yes, the buffer output voltage will drift with temperature due to buffer offset drift, unless you use chopper or autozero technique. why do you have to have constant supply voltage? It is not a problem for me if supply voltage changes .Typicallly, the buffer is in feedback operation. the close loop output
impedance is much less than its open loop ou |
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e***b
发帖数: 53 | 14 Shouldn't you read some textbook first, then tell us how bandgap works?
sources
out |
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f*****0
发帖数: 489 | 15 btw, the bandgap works without the feedback amplifier.
why do you need it then, smartie? |
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f*****0
发帖数: 489 | 16
especially on Living board and automobile board.
well, smartie, here is another bandgap. try to figure out how it works. |
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e***b
发帖数: 53 | 17 <<
way), you still couldn't figure out that question by yourself.>>>
You tell me where the constant current come from!
<<
maintains a constant voltage between terminal 1 and 2.>>>
lm113 is a constant voltage diode? what are you talking bout? LM113 is a bandgap reference, it is NOT just a diode. There is no such kind of stuff called constant voltage diode. |
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e***b
发帖数: 53 | 18 To completely make you shut up, here is what Bob Pease explained how
bandgap works.
"The beauty of the band-gap reference is the summation of the Vbe term,
which decreases at the rate of about -2 millivolts /°C, and the (delta-Vbe
term) which grows at about + 2 millivolts /°C, to achieve an overall
Temperature Coefficient (Tempco) that is substantially zero. ALL band-gaps employ this summation of a growing and a shrinking voltage, to make a stable low-tempco voltage."
Again, there is no such th |
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f*****0
发帖数: 489 | 19 "here is what Bob Pease explained how bandgap works. "
I didn't know that you impersonate others for a living.
I didn't ask bob peace how it works. I asked you how it works.
but I guess we know the answer, smartie. |
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f*****0
发帖数: 489 | 20
Vs changes?
I am happy to teach you how it works but smartie, where is the delta Vbe and
how does it add to Vbe to form the bandgap, jerk! |
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w7
发帖数: 76 | 21
eejob: Looks like that you're really into the analog field. Good job for the technical part of the whole argument.
Don't know this bandgap part is still used or not today but LM10 that is designed by Bob is still being the off-the-shelf part today. |
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j***j
发帖数: 324 | 22 do not need to argue anymore...
anyone who knows a little bit ic design will know who is correct,
.
电流，如果是，为什么？我都问你好几次了，你就知道东扯西扯，一直解释不了。你如
果解释不了，就闭上你的臭嘴。
正确的选择这个增益，让 delta vbe * gain = +2mv/ C, 因为 vbe 的温度系数大约是
－２mv/C
。象你这种蠢东西，还是滚回你的化粪池里，别在这里误导这里的年轻人，你那个FKU
bandgap 理论根本就是狗屁不通。 You stinky dumb ass! FKU, that is your name!
处被人骂成是神经病的蠢东西，你说的话，会有人当真吗? |
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w7
发帖数: 76 | 23 I still have a couple of questions here:
1. In the schematic of LM113, the collector of the far right transistor Q9
is connected to R9. But for me that looks more reasonable if the collector
of Q9 is directly hooked to the top rail "1". Q4/Q7/Q9 form a negative
feedback loop to force the voltage between "1" and "2", which is the output
voltage of this bandgap ckt. At this point, the schematic in Bob Pease'
article is as same as what I think. I can't appreciate why the Q9 is hooked
that way.
2. I |
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f*****0
发帖数: 489 | 24 the widlar bandgap recognized the positive but small TC for delta Vbe and
tried out to lay it on top of a Vbe (which has a negative TC).
so the voltage drop over R2, V2=I2*R2=(delta Vbe / R3)*R2. by adjusting R2/
R3, you can give it a tempco that is "roughly" +2mv/c.
the Vout = V2+Vbe (for Q3), and by trimming R2/R3, you get a Vout that has a
0 TC.
the brokaw design is roughly the same except that it runs both legs of the
unbalanced "current mirror" at the same current - it is driven by a curren |
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f*****0
发帖数: 489 | 25 let me just answer one of your questions and then you will get a flavor of
how far off you are:
"3. 如果我们有一个constant current source, 那它肯定不应该随温度，power
source 变化而变化，对吧。总之，就应该总是constant, 对吧？"
what is "constant" is relative. a typical constant current source for
examples uses a series of diodes or zener or a LED to drop a "constant"
voltage off a resistor, in a fashion very similar to the widlar bandgap
topology.
in such a design, you consider the forward voltage off the diodes / zener /
led to be co |
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f*****0
发帖数: 489 | 26 to save you the pain of finding out what a CCS is, please take a look at the
attached.
you will notice that a) they are all quite similar in topology; and b) one
of them is identical to the widlar constant current source.
the same / similar designs are commonly accepted by those who know and used
in many highly successful and publically known designs, unlike those highly
secretive designs by a certain "bandgap" expert, :).
Class dismissed. |
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p*********a
发帖数: 25 | 27 经典的bandgap，如razavi书上所示
想问一下嵌位的op-amp正负输入级能不能调换？ |
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f*x
发帖数: 7 | 28 Photonic crystals are three-dimensional dielectric structures with lattice
parameter on the order of the wavelength of light. This has a similar
influece on the propagation of light as atomic crystals have on electrons.
Thus, the dispersion relation of light can be desribed with band structures
in a Brillouin zone in recipocal space. Photonic crystals are being pursued
to obtain a range of forbidden frequncies--a photonic bandgap - in the
optical range. This has important quantum optical consequ |
|
发帖数: 1 | 29 What Happened To GaN And SiC?
Early predictions were overly optimistic, but these technologies are
starting to make inroads.
About five years ago, some chipmakers claimed that traditional silicon-based
power MOSFETs had hit the wall, prompting the need for a new power
transistor technology.
At the time, some thought that two wide-bandgap technologies—gallium
nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace
the ubiquitous power MOSFET. In addition, GaN and SiC were suppos... 阅读全帖 |
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b******e
发帖数: 445 | 30 看到班上抱怨面试时遇到老印, 我最近也是深受其害.在其中一个面世中,其他人都相谈
甚欢, 只有一个老印百般刁难,考我bandgap stability问题,我很自信又很详细的解释
给他听, 他竟然说he didn't get it.其实这个问题上一个面世人已经问过,那人还人为
我解释的非常清楚,远超出他对次的理解. 面世完我跟ld说这次如果不成一定是这个老
印做鬼, 果不其然,第二天,hiring manager打电话给我,我当时以为是给offer,谁知道
他说有interviwer人为我连bandgap都不懂.在电话里我对这个manager说不给我offer没
有问题,但是对于这个bandgap问题我必须要clarify一下,接下来我又非常详细地把
bandgap从理论到startup, stability, 到low power supply, 到psrr解释了一边.我估
计这些manager不会人为我不懂了, 他也明白是怎么一回事了.可是他竟然说他要
balance组里人的感受, 尽管我技术上没有问题, 还是不能给我offer.我说没有问题.
其实在我多次面试中, 老中还是很照顾... 阅读全帖 |
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发帖数: 1 | 31 Silicon Carbide: Smaller, Faster, Tougher
Meet the material that will supplant silicon in hybrid cars and the electric
grid
Illustration: Anatomy Blue
Some technological revolutions are flashy, and some are almost invisible. We
’re quite familiar with the flashy ones; they’ve given us powerful
computers we can hold in the palms of our hands, devices that can pinpoint
our locations by way of orbiting satellites, and the ability to bank and
shop without leaving our homes.
But none of these innovat... 阅读全帖 |
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g*********n
发帖数: 808 | 32 GaAs vs. Si from wikipedia
Comparison with silicon
GaAs advantages
Some electronic properties of gallium arsenide are superior to those of
silicon. It has a higher saturated electron velocity and higher electron
mobility, allowing gallium arsenide transistors to function at frequencies
in excess of 250 GHz. Unlike silicon junctions, GaAs devices are relatively
insensitive to heat owing to their wider bandgap. Also, GaAs devices tend to
have less noise than silicon devices, especially at high fre... 阅读全帖 |
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s*********s
发帖数: 18 | 33 graphene 研究的一个问题（请教前辈）：
graphene 在电场的gate的作用下，可以打开bandgap,i.e bilayer----- tunnable
bandgap, trilayer -----overlap band gap.
1.那么在perpendicular magnetic field 的作用下，graphene 的情况如何呢？
bandgap 能打开？ 还是打开excitonic condensation gap?还是其他情况？？
2. four-terminal graphene device 在perpendicular magnetic field 的作用下，发
现测量的电阻（不是hall effect 磁阻）线性或者非线性的随着磁场增加而增加，也就
是： R vs B， 这个如何解释？
希望前辈指教！ |
|
M***a
发帖数: 175 | 34 原来这样，老兄你给介绍介绍打开bandgap的方法吧？大概bandgap有多宽？谢谢
如果有了bandgap，那这篇文章利用的就是absorption saturation吧？很多材料都可以
做，石墨烯有什么特别的么？ |
|
s*********s
发帖数: 18 | 35 graphene 研究的一个问题（请教前辈）：
graphene 在电场的gate的作用下，可以打开bandgap,i.e bilayer----- tunnable
bandgap, trilayer -----overlap band gap.
1.那么在perpendicular magnetic field 的作用下，graphene 的情况如何呢？
bandgap 能打开？ 还是打开excitonic condensation gap?还是其他情况？？
2. four-terminal graphene device 在perpendicular magnetic field 的作用下，发
现测量的电阻（不是hall effect 磁阻）线性或者非线性的随着磁场增加而增加，也就
是： R vs B， 这个如何解释？
希望前辈指教！ |
|
m*******e
发帖数: 119 | 36 由于存在大量的缺陷，粉末状的Al2O3的bandgap比单晶的低。玻璃态Al2O3的bandgap是
3.2eV,晶态的bandgap是4.3 eV,这样在高温下由于热激发， 都成半导体和导体了。另
外如果Al2O3不纯，杂质会生成mid-gap能级，也会大大增加Al2O3的导电能力。 |
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a***g
发帖数: 3377 | 37 这个垃圾校长不知道矫枉必须过正的简单道理么？
1. Du ZW, Gong K, Fu JS, Radiation from electromagnetic bandgap microstrip
structures
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES 25 (11): 1669-1675
NOV 2004.
2. Du ZW, Gong K, Fu JS, et al., A compact planar inverted-F antenna with a
PBG-type ground plane for mobile communications, IEEE TRANSACTIONS ON
VEHICULAR TECHNOLOGY 52 (3): 483-489 MAY 2003.
3. Wang BQ, Gong K, Yang D, et al., Fine attitude control by reaction wheels
using variable-structure controller, ... 阅读全帖 |
|
w*******a
发帖数: 102 | 38 A promising power semiconductor startup has got good VC funding in China and
strong government support. Aim at fasting growing China market, this start-
up will design and manufacture wide-bandgap compound semiconductor power
device with superior performance and low cost.
We are seeking one technical partner in power device design and fabrication.
This candidate should be passionate, responsible, and has team-work spirit
in a start-up environment. This is a full-time position in China, and the
... 阅读全帖 |
|
w*******8
发帖数: 57 | 39 A promising power semiconductor startup has got good VC funding in China and
strong government support. Aim at fasting growing China market, this start-
up will design and manufacture wide-bandgap compound semiconductor power
device with superior performance and low cost.
The core technical team is seeking one technical partner in power device
design and fabrication. This candidate should be passionate, responsible,
and has team-work spirit in a start-up environment. This is a full-time
positio... 阅读全帖 |
|
w*******a
发帖数: 102 | 40 A promising power semiconductor startup has got good VC funding in China and
strong government support. Aim at fasting growing China market, this start-
up will design and manufacture wide-bandgap compound semiconductor power
device with superior performance and low cost.
We are seeking one technical partner in power device design and fabrication.
This candidate should be passionate, responsible, and has team-work spirit
in a start-up environment. This is a full-time position in China, and the
... 阅读全帖 |
|
w*******a
发帖数: 102 | 41 A promising power semiconductor startup has got good VC funding in China and
strong government support. Aim at fasting growing China market, this start-
up will design and manufacture wide-bandgap compound semiconductor power
device with superior performance and low cost.
We are seeking one technical partner in power device design and fabrication.
This candidate should be passionate, responsible, and has team-work spirit
in a start-up environment. This is a full-time position in China, and the
... 阅读全帖 |
|
z**k
发帖数: 945 | 42 http://baike.baidu.com/view/355446.htm
龚克
目录
南开大学校长、教授、博士生导师
个人荣誉
著作及论文
编辑本段南开大学校长、教授、博士生导师
龚克[1]，男，汉族，1955年6月生，原籍湖南湘潭。工学博士，教授，博士生导师
，俄罗斯宇航科学院外籍院士。1981年11月加入中国共产党。
1982年1月毕业于北京理工大学电子工程系，后由教育部派遣出国留学，1986年在
奥地利格拉茨技术大学通信与传播研究所获技术科学博士学位。2001年获选俄罗斯宇航
科学院外籍院士。1987年回国到清华大学电子工程系工作，1994年晋升教授。曾任清华
大学研究生院副院长、电子工程系主任、微波与数字通信国家重点实验室主任、宇航技
术研究中心主任，清华大学副校长，信息学院院长，清华信息科学技术国家实验室主任
。2006年7月任天津大学校长。 2011年1月调任南开大学校长。中国科协常委。
长期从事微波、毫米波技术，电波传播方面的研究工作。近年主要从事微小区个人
移动通信、数字电视传输标准等方面的研究。主持清华一号微小卫星的研制工作，从事
... 阅读全帖 |
|
d**********u
发帖数: 4124 | 43 ☆─────────────────────────────────────☆
yuanfeiwo (原非我|梨园深) 于 (Sat Nov 15 15:51:26 2008) 提到:
从别处转载来的，可能统计并不完全
http://www.ncku1897.net/post/topic.aspx?tid=2763619
生物医学：
Cell. Vol 134, 279-290, 25 July 2008 (IF=29.887)
Physiol Rev 88: 1491–1545, 2008 (IF=29.6)
Nat Rev Neurosci. 2008 Aug;9(8):646-54. (IF=24.52)
Circulation. 2008, doi: 10.1161/CIRCULATIONAHA.107.761932 (IF=12.755)
Gastroenterology. 2008 Apr;134(4):998-1006. (IF=11.673)
Mol Psychiatry. 2008 Jan 8 [Epub ahead of print] (IF=10.9)... 阅读全帖 |
|
s**g
发帖数: 66 | 44 Thank you for sharing.Your discussion is very informing.
I'd like to make a few comments:
1. is MP0 a JFET? If so, the device symbol you drew is incorrect.
2. Almost all band gap start up ckt can be properly simulated. That is, you
shall be able to predict if the ckt could latch up to off-condition. Keep in
mind start up problem is essentially a DC operating point problem, not a
transient issue.I guess you either use transient sim or power supply DC
sweep to verify your design, which is not the ... 阅读全帖 |
|
c********r
发帖数: 172 | 45
MP0就是一个PMOS管子
shall be able to predict if the ckt could latch up to off-condition. Keep in
mind start up problem is essentially a DC operating point problem, not a
transient issue.I guess you either use transient sim or power supply DC
sweep to verify your design, which is not the right way to do it.
并不是所有的启动都可以完全正确地仿真出来。像这个旧的band-gap电路所有corner的
仿真都显示没有start-up issue，但就这两块芯片在这里出问题了。
另外，当启动电路只有两个DC工作点时（其中一个是零电流状态），你说的是对的，就
是一个工作点问题，只要避开零状态点就可以。当启动电路有多个DC工作点时（你估计
没有遇到过，但我遇到过），就很复杂了。
启动过程必须用瞬态仿真来验... 阅读全帖 |
|
e********h
发帖数: 12 | 46
MP1/
这个bandgap的启动电路应该是Q2，所以Q2会拉高Q1Q0的base从而启动电路，这个电路
应该不会有启动问题。有可能是X或者Q2的emitter电压过低，导致无法启动。但是这个
电路有个设计问题，Q2这个启动电路无法停止工作，如果Q2的电压过高，会导致
bandgap两路mismatch，从而增加TC。 |
|
s**g
发帖数: 66 | 47 Thank you for sharing.Your discussion is very informing.
I'd like to make a few comments:
1. is MP0 a JFET? If so, the device symbol you drew is incorrect.
2. Almost all band gap start up ckt can be properly simulated. That is, you
shall be able to predict if the ckt could latch up to off-condition. Keep in
mind start up problem is essentially a DC operating point problem, not a
transient issue.I guess you either use transient sim or power supply DC
sweep to verify your design, which is not the ... 阅读全帖 |
|
c********r
发帖数: 172 | 48
MP0就是一个PMOS管子
shall be able to predict if the ckt could latch up to off-condition. Keep in
mind start up problem is essentially a DC operating point problem, not a
transient issue.I guess you either use transient sim or power supply DC
sweep to verify your design, which is not the right way to do it.
并不是所有的启动都可以完全正确地仿真出来。像这个旧的band-gap电路所有corner的
仿真都显示没有start-up issue，但就这两块芯片在这里出问题了。
另外，当启动电路只有两个DC工作点时（其中一个是零电流状态），你说的是对的，就
是一个工作点问题，只要避开零状态点就可以。当启动电路有多个DC工作点时（你估计
没有遇到过，但我遇到过），就很复杂了。
启动过程必须用瞬态仿真来验... 阅读全帖 |
|
e********h
发帖数: 12 | 49
MP1/
这个bandgap的启动电路应该是Q2，所以Q2会拉高Q1Q0的base从而启动电路，这个电路
应该不会有启动问题。有可能是X或者Q2的emitter电压过低，导致无法启动。但是这个
电路有个设计问题，Q2这个启动电路无法停止工作，如果Q2的电压过高，会导致
bandgap两路mismatch，从而增加TC。 |
|
t**********i
发帖数: 63 | 50 Fresh或者有经验的。有兴趣者站内信联系
Design and implement high speed analog/mixed-signal circuits in advanced
CMOS technology for integration in system-on-chip products:
- understand how circuits work
- develop and improve new and existing circuit solutions
- simulate circuits
- present and receive technical feedback at reviews
Design, model, document and communicate Analog IP to internal customers:
- create specs
- create circuit models
- define package and pc board requirements
Understand system level archit... 阅读全帖 |
|
