k******n
发帖数: 13 | 1 SiO2 has 7 types of crystals and one glassy type. If it is from single crystal
or glass, it is transparent, if from multi-crystal or from a lot of amorphous
particles, must be opaque due to the scattering.
Why not cleave and/or polish the end of your matrix with film (if it is not
too hard), and observe from the cross-section by SEM? It will be more precise
and direct than optical measurement based on te reflection or transmission
equation. | z*r
发帖数: 9 | 2 Yes, SEM can't be used in real-time system. OCD is a emerging technology
to measure the profile of 2 dimensional structures like trench and long lines.
OCD is called optical critical dimension metrology. UC berkely (EECS) has a
lot
of research and there is a spin off company called Timbre which was bought by
Tokyo electronics, other companies like nanometrics and kla, maybe applied
materials should also have this kind of technologies. But for three
dimensional
structures, like metal island and c | l****g
发帖数: 4 | 3 In situ measurement of etch profiles in a plasma etching is difficult if you
really want to know the mesa profile. However if your CD is not too small and
you don't really want to konw the profile but rather to know the etch depth
(sometime also called etch profile), there is an easy way. In general, you
employ a laser beam incident on your sample, preferably vertical incident, and
measure the reflected laser intensity I, from the I vs process time T curve,
you should be able to determine the |
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