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EE版 - Intern 职位: Semiconductor RF Power Devices (转载)
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话题: devices话题: power话题: rf话题: intern
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1 (共1页)
x*p
发帖数: 78
1
【 以下文字转载自 JobHunting 讨论区 】
发信人: xop (xop), 信区: JobHunting
标 题: Intern 职位: Semiconductor RF Power Devices
关键字: Semiconductor,internship,RF power device
发信站: BBS 未名空间站 (Mon Jan 7 17:31:31 2013, 美东)
Mitsubishi Electric Research lab is seeking a highly motivated intern to
carry out research work on Semiconductor RF Power Devices. The ideal
candidate would be in the middle or second half of a Ph.D. program in
Semiconductor and large bandgap Power devices Physics, design and device
modeling. Strong simulation skill and theoretical knowledge in semiconductor
device are expected. Knowledge of thermal mechanisms in semiconductor
devices, TCAD simulation and other device simulation tools are an asset. The
duration of the internship will be 3 to 6 months. Early application for a
longer duration is encouraged.
If you are interested, please contact Dr. Koon Hoo Teo at t*[email protected].
m*****t
发帖数: 3477
2
能不能说说具体哪个wide bandgap, GaN么?

semiconductor

【在 x*p 的大作中提到】
: 【 以下文字转载自 JobHunting 讨论区 】
: 发信人: xop (xop), 信区: JobHunting
: 标 题: Intern 职位: Semiconductor RF Power Devices
: 关键字: Semiconductor,internship,RF power device
: 发信站: BBS 未名空间站 (Mon Jan 7 17:31:31 2013, 美东)
: Mitsubishi Electric Research lab is seeking a highly motivated intern to
: carry out research work on Semiconductor RF Power Devices. The ideal
: candidate would be in the middle or second half of a Ph.D. program in
: Semiconductor and large bandgap Power devices Physics, design and device
: modeling. Strong simulation skill and theoretical knowledge in semiconductor

w********o
发帖数: 10088
3
看这个description,估计是去做GaN on silicon的东西
还得弄点heat dissipation之类的模拟

【在 m*****t 的大作中提到】
: 能不能说说具体哪个wide bandgap, GaN么?
:
: semiconductor

m*****t
发帖数: 3477
4
呵呵,看来各家都在搞GaN-on-Si啊。

【在 w********o 的大作中提到】
: 看这个description,估计是去做GaN on silicon的东西
: 还得弄点heat dissipation之类的模拟

w********o
发帖数: 10088
5
三菱一直在搞III-V的FET,不搞GoS是不可能的,哈哈
小日本对GoS那是相当喜欢啊

【在 m*****t 的大作中提到】
: 呵呵,看来各家都在搞GaN-on-Si啊。
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大家对III-V RF device的前景有什么看法?
相关话题的讨论汇总
话题: devices话题: power话题: rf话题: intern