l*******r
发帖数: 15 | 1 【 以下文字转载自 EE 讨论区 】
发信人: lakeriver (), 信区: EE
标 题: Epi / Process/Device/ FA Engineer Openings
发信站: BBS 未名空间站 (Tue Jan 22 21:34:31 2019, 美东)
WinS (Shenzhen Institute of Wind bandgap Semiconductors深圳第三代半导体研究
院) is seeking the following job candidates. The R&D team consisting of
senior VPs /scientist/engineers/ with 10~20 years experiences in industry
from U.S. Candidates with semiconductor materials/device/process background
and FAB experience are highly recommended. Package is negotiable, benefits
comparable to SUSTech University（南方科技大学）
Candidates with Ph.D from top 150 universities are qualified to get “孔雀计
划A/B/C” with 3.0 to 1.6 million RMB benefits from Shenzhen government, and
will be doubled by Longhua District government. (For example, if you get “
孔雀计划C”, you will get 3.2 million RMB in 5 years, no tax; B for 4.0
million RMB and A for 6 million RMB, respectively).
Please send your C.V. and cover letter to [email protected] if
interested,
thanks.
1. Senior MOCVD Epi Engineer
Responsibility:
• Responsible for the general operation of MOCVD systems and team
management.
• Evaluate epitaxial material using the various characterization
tools.
• Troubleshooting and resolve materials and MOCVD equipment
relatedissues.
• Develop next-generation GaN-based UVA/Blue/Green LED Epi wafers
with shorter process time, high uniformity, high yield, high ESD tolerance,
high LOP and etc.
Qualifications:
• MS/ME or Ph.D. (with 5+ years of applicable hands-on experience)
in Physics, Chemical Engineering, Material Science, Electrical Engineering,
or other related discipline(s).
• 5 (5+) years of direct experience with commercial MOCVD process
and equipment technology. Prior track record of GaN epitaxial material
growth is a plus.
• Prior experience in III-V materials characterization techniques
such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL),
Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS,
and etc. is strongly desired.
• Experience in semiconductor manufacturing epitaxy utilizing
design of experiment (DOE), statistical process control (SPC), and
methodical data analysis for process performance improvement and structured
(root-cause) troubleshooting is essential.
• Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab.
• A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
• Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.
2. MOCVD Epi Engineer
Responsibility:
• Responsible for the operation and general maintenance of MOCVD
systems.
• Maintain SPC charts, growth databases, process sheets and
equipment logs.
• Responsible for following safety procedures and protocols in
MOCVD lab.
• Operate epi characterization related tools
• Evaluate epitaxial material using the various characterization
methods.
• Work with epi team to resolve materials and MOCVD equipment
related issues.
Qualifications:
• Ph.D or MS/ME (with 3+ years of applicable hands-on experience)
in Physics, Chemical Engineering, Material Science, Electrical Engineering,
or other related discipline(s).
• 3 (3+) years of direct experience with commercial MOCVD process
and equipment technology. Prior track record of GaN epitaxial material
growth is a plus.
• Prior experience in III-V materials characterization techniques
such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL),
Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS,
and etc. is strongly desired.
• Experience in semiconductor manufacturing epitaxy utilizing
design of experiment (DOE), statistical process control (SPC), and
methodical data analysis for process performance improvement and structured
(root-cause) troubleshooting is essential.
• Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab.
• A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
• Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.
3. Process & Device Engineer
Responsibility:
• Responsible for the semiconductor process development of GaN-
based LED devices.
• Maintain SPC charts, process databases, process sheets and
equipment logs.
• Responsible for following safety procedures, general operation
and maintenance protocols in chip FAB.
• Evaluate and analyze LED chip performance using various
characterization methods.
• Work with chip team to troubleshoot and resolve process and
device related issues.
Qualifications:
• MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year
industry experience) in Physics, Chemical Engineering, Material Science,
Electrical Engineering, or other related discipline(s).
• Experience with chip fabrication in semiconductor processing,
such as photolithography, clean, etch, thin film deposition, anneal and etc.
• Experience working with III-V Semiconductors (GaN preferred) is
highly desirable. Prior experience in IC industry is a big plus.
• Experience in semiconductor chip processing utilizing design of
experiment (DOE), statistical process control (SPC), and methodical data
analysis for process performance improvement and structured (root-cause)
troubleshooting is essential.
• Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab and etc.
• A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
• Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams.
4. FA Engineer
Responsibility:
• Responsible for the characterization of LED devices.
• Responsible for following safety procedures and protocols in
characterization FAB.
• Evaluate LED chip performance using the various characterization
methods.
• Works with team to resolve process and device related issues.
Qualifications:
• MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year
industry experience) in Physics, Chemical Engineering, Material Science,
Electrical Engineering, or other related discipline(s).
• Experience with characterization of LED devices, such as COT, LOP
, IS, L-I-V, EQE, FIB, SEM and aging test. Understand the semiconductor
optoelectronic device physics.
• Experience in semiconductor backend processing utilizing design
of experiment (DOE), statistical process control (SPC), and methodical data
analysis for process performance improvement and structured (root-cause)
troubleshooting is essential.
• Demonstrated proficiency in the use of statistical analysis
programs for gathering and analyzing process data related to performance
specifications, such as JMP, MiniTab and etc.
• A highly-motivated self-starter with ability to work
independently and a strong team player with good communication skills.
• Ability to adapt to changing priorities, thriving on technical
challenges within and outside of core area of expertise, and to interact
effectively across multi-functional teams. | l*******r
发帖数: 15 | 2 GaN HMET/RF/Power Electronics的相关背景也欢迎来洽谈 |
|
