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Military版 - 发现一间锁男硬体startup
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相关话题的讨论汇总
话题: lu话题: dr话题: he话题: university话题: crossbar
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1 (共1页)
f***y
发帖数: 4447
1
http://www.crossbar-inc.com/company/management/wei-d-lu/
Prof. Wei D. Lu
Chief Scientist and Co-Founder
Dr. Wei D. Lu has been co-founder and chief scientist of Crossbar since 2010
where he focuses on the commercialization of resistive-switching device
based memory technology. He brings over 10 years of expertise in
nanostructures and devices including high-density memory and logic devices
based on two-terminal resistive switches, neuromorphic circuits,
semiconductor nanowire devices, and electrical transport in low-dimensional
systems.
He is currently an associate professor of Electrical Engineering and
Computer Science and Applied Physics at the University of Michigan. Dr. Lu
was also a postdoctoral research fellow at Harvard University from 2003-2005.
Dr. Lu specializes in the research and development of silicon-based, CMOS
compatible, high-performance, non-volatile crossbar memory. His achievements
include the first integration of crossbar RRAM array with CMOS circuitry
without using external transistor or diode as selectors. He also was first
to demonstrate that resistive switching devices can effectively emulate
synapse for neuromorphic system applications.
He won the NSF Career Award in 2010 and the Wilson Award in 2003. He has
published 50 journal papers that have been cited over 4,000 times by peer
researchers. Dr. Lu has given plenary or invited talks at a host of
international conferences such as IEDM, IEEE Nano, NVMTS and MRS.
Dr. Lu is an active member of the Emerging Research Device working group of
ITRS and co-editor-in-chief of Nanoscale, a flagship journal of the Royal
Society of Chemistry. He has also served as a reviewer and panelist for NSF,
DOE, ARO, AFOSR and over 30 other scientific journals.
Dr. Lu has a Ph.D. in Physics from Rice University in Texas, and a Bachelor
of Science in Physics from Tsinghua University in China.
f***y
发帖数: 4447
2
http://news.mydrivers.com/1/474/474123.htm
国商威武!中芯国际40nm造全新RRAM内存
目前,国内最大的晶圆代工厂当属中芯国际,除了处理器业务之外,他们现在又打算把
触手伸向存储芯片行业。2014年9月,中芯国际成功的自主研发了采用38nm工艺的NAND
闪存芯片。
日前,中芯国际与Crossbar公司成功签署了一项合作协议。协议的内容包括,中芯国际
将使用40nm工艺为Crossbar代工RRAM阻变式存储器芯片,这项协议的签署代表中芯国际
成功进军下一代内存产业。
RRAM阻变式存储器,亦可称之为相变内存,其使用硫化物玻璃进行制造,芯片的特点在
于,硫化物玻璃受热后可以在晶体和非晶体之间进行形态变化,不同的状态下,其电阻
亦不相同,利用这项特性,我们可以进行数据的存储。
与NAND相比,RRAM不仅写入速度上快30倍,同时,寿命也要比DRAM高出10倍以上。而且
RRAM最大的优点在于设备断电后依旧可以保存数据,这样来看,RRAM不仅仅可以代替内
存,同时还可以取代闪存。
RRAM具有高性能和低功耗的优点,未来将可用于在物联网、可穿戴设备、平板电脑、工
业市场等环境下。目前Intel和三星等行业领导者都在大力推进RRAM内存的发展。
a***m
发帖数: 5037
3
发考题还弄个startup玩玩 是听不错的
f***y
发帖数: 4447
4
锁男又多个地方投简历
1 (共1页)
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相关话题的讨论汇总
话题: lu话题: dr话题: he话题: university话题: crossbar