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发帖数: 4784 | 1 Si Nanowires as Sensors: Choosing the Right Surface
Cedric R. Leão, Adalberto Fazzio, and Antônio J. R. da Silva*
Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 S&
#227;o Paulo, SP, Brazil
Abstract:
We show, using ab initio calculations based on density functional theory,
that for hydrogen-passivated Si nanowires (SiNWs), the relative contribution
of surface atoms to the band-edge states varies according to the way these
surface atoms are bonded to the core on |
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