m*********e
发帖数: 533 | 1 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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m*********e
发帖数: 533 | 2 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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y*****r
发帖数: 208 | 3 原文链接在此。
http://blog.chembark.com/2013/08/06/a-disturbing-note-in-a-rece
A recently published ASAP article in the journal Organometallics is sure to
raise some eyebrows in the chemical community. While the paper itself is a
straightforward study of palladium and platinum bis-sulfoxide complexes,
page 12 of the corresponding Supporting Information file contains what
appears to be an editorial note that was inadvertently left in the published
document:
Emma, please insert NMR data here! where are t... 阅读全帖 |
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p*********e
发帖数: 11 | 4 To purchase a FT-IR MIKE Miracle sampler, what crystal, ZnSe, Ge, Si,
Diamond, AMTIR is good? Thanks |
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m*********e
发帖数: 533 | 5 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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m*********e
发帖数: 533 | 6 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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t*****m
发帖数: 254 | 7 GaAs dominates the microwave circuit and devices in these years.
Because Si technology is well developed and fabrication cost is low, many
people are still trying to extend silicon circuit to higher frequency range.
Though MMIC is fabricated mostly with GaAs, some silicon based MMIC designs
at S or L band are coming up. But they are still in lab. The atracting thing
of these silicon based designs is their lumped element design at this
frequency. This means they can be built much smaller than dis |
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s*******r
发帖数: 921 | 8 As far as I know, the cost of GaAs wafers are much more
than silicon wafer, which makes them less widely used even
that they have higher electron mobility.
Also, at very small dimension, the mobility won't be the
limiting factor
as velocity saturation will play the limiting role. At this
condition,
the advantage of III-V over Si will be very small.
Another reason making III-V less attractive in ULSI is that
SiGe is attracting
much attention from the industry, especially IBM. Ge has
also a high m |
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b**d
发帖数: 7 | 9
No, GaAs wafer is not so expensive compared with SiC, for example.
, usually 3 inch with decent quality costs about 3-5 hundreads bucks.actually
quite cheap.In addition, it is worth noting that the cost of substrate is
quite small in the total of chip fabrication. <2%? The main obstable is its
sophisticated processing. for example, usually 1/3 cost of fabrication is
lithography.
No, the saturation velocity of electron in GaAs is much higher than in Si.
in adiition, at sub micro devide, what dom |
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s**t
发帖数: 6 | 10 Si has an excellent dielectric layer SiO2 while GaAs does not have. this is
one of the fundamental difference:)) |
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l******7
发帖数: 311 | 11 【 以下文字转载自 NanoST 讨论区 】
发信人: liuliu07 (柳柳), 信区: NanoST
标 题: 哪里可以定购到便宜得si-wafer啊？
发信站: BBS 未名空间站 (Thu Mar 20 12:24:52 2008)
哪位知道啊
就是很便宜，不需要dope,多大多厚都没要求
谢谢！！ |
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s******p
发帖数: 4962 | 12 Au对Si的附着能力不好
一般要用Ti做一层buffer
那Cu呢？
需要buffer layer么？
工艺新警察....请多指教 |
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c**y
发帖数: 99 | 13 Cu需要，不然很容易peel off，而且Cu与Si 的interdiffusion也不可以忽视 |
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c**y
发帖数: 99 | 14 the catalyst for nanowire growth should be isolated nanoparticle instead of
contious films. If you prepare the Au or Cu film less than 10nm, I think
the stress is not large enough to peel off from the Si substrate. Why not
search related reference? |
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w********o
发帖数: 10088 | 15 Cu应该不需要，就是起个诱导作用，随便撒点上去就行了，厚了没用，长nm deposit
1nm足够了，厚了你nanowire的材料钻不到Cu下面，长不到Si上去 |
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M*******c
发帖数: 4371 | 16 Cu同样需要buffer. Cu一样会和Si反应. |
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w********o
发帖数: 10088 | 17 Si上的dielectrics的permittivity从low-k到high-k的range大概有多少？
能想要啥permittivity都能找到相应的材料么？
刚看了一篇paper，文章里面用的permittivity取值1,2,3,4,6等，信手拈来，能做到么
？谢谢 |
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p*****g
发帖数: 274 | 18 Need to be filled soon, looking for some one has around 3 years in the SI
experience.Responsibilities will include analysis and data collection of
high speed I/O interface and power distribution network.
Please PM me if you are interested. |
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w******3
发帖数: 5 | 19 求审稿。本人工作和phd方向为III-V and Si device, 包括memory device, mosfet,
photodetecor, RF/microwave devices, 以及characterization, device modeling,
fabrication. 审稿快，请站内联系。 |
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c*******e
发帖数: 417 | 20 现在做的方向是SI/PI/Package,之前做过EMI, IO circuit 方向的research，真心求相
关方向审稿机会，会在1-2周内完成优质审稿。如果有相关机会，希望可以得到帮助，
站内信联系。非常感谢！！ |
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b*****h
发帖数: 29 | 22 if this is reflux, Si may not work. indeed even can not work in high
concentration from literature.
but all out of first hand, maybe it is wrong.
Re【 在 lorenzo (想当流氓...没天分:() 的大作中提到: 】 |
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z**h
发帖数: 224 | 23 【 以下文字转载自 Chemistry 讨论区,原文如下 】
发信人: zzwh (钻石小程), 信区: Chemistry
标 题: 请问谁知道Si 和SO2的表面能？
发信站: The unknown SPACE (Wed Mar 26 14:06:33 2003) WWW-POST
Thanks. |
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h*****h
发帖数: 5 | 24 不是搞高分子的，跟着paper做SI-ATRP聚合copolymer。两种单体分别含有MEHQ和
hydroquinone monomethyl ether做inhibitor。只用一种单体的时候不除inhibitor都
可以聚合，可是共聚合死活不行。请问这个与inhibitor有关系么？谢谢各位达人～～
～ |
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w******5
发帖数: 4 | 26 我用evaperater往硅片上镀Au，先镀一层Ti，然后要恢复大气压换成Au（我们的
机器太老了，想镀两层，只见必须要换filament)，这个过程好像很容易在镀金之前钛的
表面就被污染了，然后金和钛就不能够很好的粘合，造成的结果就是，我用
(microcontact printing) stamp往金表面上印pattern时，Au很容易从Ti表面剥落
我的问题是
1。怎样能避免钛表面被污染，或减少污染？我镀完Ti之后，要把Si Wafer wash with
ethanol or some other solvent么？
2。大家做microcontact printing时，有没有窍门？我总是有时候能印上有时候印不上
非常感谢！！！！！！！！！！！！！！！！！ |
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w******5
发帖数: 4 | 27 我是先在Si表面镀一层Ti,再镀Au的阿。。。Ti就是帮助Au粘上的 |
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S****d
发帖数: 298 | 28 是c-Si衬底上外延。门外汉问问题，请内行赐教。 |
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a**o
发帖数: 1 | 29 (1) 晶格常数和热膨胀系数失配很大，缺陷密度高，薄膜很容易龟裂
(2) Si容易扩散，使GaN的背景施主浓度过高 |
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u****m
发帖数: 2 | 30 在Si表面的东西大家已经做烂了，请问最新发展方向在哪里？ |
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m*******e
发帖数: 119 | 31 Si-SiGe heterostructure seems quite hot in recent research |
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m*********e
发帖数: 533 | 32 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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m*********e
发帖数: 533 | 33 数据分析, DA,DS,SI需学什编程langugage
sql?
python?
r? |
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r**********e
发帖数: 2821 | 35 上周培朋友一块去买车，顺便看了Civic Si,感觉里面很一般。特别是从车里面开门那
个把手，一个硬塑料，真怀疑用久了就容易掰断了。内饰比俺的老passat内饰差得多了
，passat 怎么也是门内侧包的是真皮，从里面开的把手是金属镀铬的。 |
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m*********8
发帖数: 1018 | 36 Fifth Gear里面测Mugen Si比S2000快不少咧,估计Jap Spec Stock不会太输给S2K |
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c*********r
发帖数: 19468 | 37 貌似WRX和Si不在同一个级别吧，价钱、性能都差不少…… |
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r*******1
发帖数: 4394 | 38 我那开过si啊，都是道听途说的（topgear说的） |
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e***i
发帖数: 3894 | 40 GA, no snow at all.
Another question. Which one performs better? SI coupe or sedan?Sedan is
heavier but seems have a better frond/rear weight distribution. |
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W*******d
发帖数: 446 | 41 WRX performs better. Si looks better.
depends on what u looking for. |
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e***i
发帖数: 3894 | 42 RE
I' just got the Si but will try WRX as my next car. |
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h****y
发帖数: 9234 | 43 今天去看了这个车,不过只是看了看内饰和外观和引擎盖下面, 没有试开. 那哥们在fir
estone上着班呢比较忙.就没跟他提试驾,好在离我住的地方非常近.
里面都挺不错的. 不过就是2个前轮需要换胎了,磨的差不多了
后轮是新胎,还不错
civic si hatchback感觉挺不错的,里面空间挺大,而且前面板的设计非常合理的感觉.
如果没问题的话就准备入手这辆了.他要价6k,感觉也还行.(03年,116k miles)
strut
li
markers
wi
com |
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l**********l
发帖数: 4468 | 44 什么时候偶们换车开哇。
我是civic si sedan的坚定粉丝。
原来原厂的vtec这么晚开，那升档要保持不掉出vtec还是要点技术了。难怪大家都装
vtec controller了。 |
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t*a
发帖数: 18880 | 45 你去empti那里等$21K OTD的新si好了，呵呵... |
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e***i
发帖数: 3894 | 46 Atlanta, GA
我那年估计就是Dealer那儿的Si太多，卖不掉，所以才打折卖的…… |
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t*a
发帖数: 18880 | 47 这也是我"放弃"作为daily drive的车子的原因之一,如果不拉高转速,就不够"核算"了.
.. si, rx8... (s2k 2 seat, doesn't count). 可是多少时候会拉这个转速呀... 当
然拉起来也辛苦点,所以我一如既往的turbo +DSG/DCT了,赫赫... |
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