ET
发帖数: 10701 | 1 啥是跨导非线性？啥是输出导纳非线性？
我觉得这个问题，理想情况下，
Vout/Vin = -1 这是理想线性关系。
= gm1*1/gm2 (2 是cascode transistor, 1是input transistor)
但实际是gm1/(gm2+gmb)
gm1= w/l*kncox(vgs - vth1)
gm2 = w/lkncox(vg-vs-vth2)
对于transistor 1.. vs = vb = 0, normally so vth 不和vsb相关
对于transistor 2, vb = 0, vs 是第一级的output, 就是在bias point, vth2 是f(vs
b), 这就带来了所谓的sqrt(vsb)的非线性
假设输入信号是sin.. 即使transistor biasing在gm最平的地方， 第一级的输出也是个
放大的sin..第2级的vth 就是第一级输出的函数。
所以我认为第2级，casscode transitor带来的影响大。 |
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f******8
发帖数: 150 | 2 Under the supervision of VP, Chief Technical Officer, create and validate
large-signal non-linear models for range of RF power transistors. Initially,
models will be GaN but may eventually include LDMOS. The candidate must be
self-motivated and able to work independently with minimal supervision. The
candidate must be able to demonstrate a proven track-record in the
successful development of non-linear models for RF power transistors (
ideally GaN) with good agreement between modeled and measur... 阅读全帖 |
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w******e
发帖数: 953 | 3 At least Bao zhe nan survived after her Schön scandal.
Withdrawn journal papers
On October 31, 2002, Science withdrew eight papers written by Schön:[14]
• J. H. Schön, H. Meng, Z. Bao (2000). "An Organic Solid State
Injection Laser". Science 289 (5479): 599–601. Bibcode 2000Sci...289..599S
. doi:10.1126/science.289.5479.599. PMID 10915617. (Retracted)
On February 24, 2003, Applied Physics Letters withdrew four papers written
by Schön:[17][18][19][20]
• J. H.... 阅读全帖 |
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a***r
发帖数: 981 | 4 ☆─────────────────────────────────────☆
funhunt (funhunt) 于 (Sat Feb 2 00:03:06 2013, 美东) 提到:
有读者致信某顶级会计刊物，指出此做行为研究的牛人一篇两年前发表的文章数据有明
显错误，此牛人承认疏失。编辑怀疑可能还有其他错误，坚持要求作者提供原始数据。
牛人以和提供数据的公司有保密协定为由拒绝提供。编辑不让步，牛人只好自愿撤稿。
牛人所在某私立学校马上展开调查，不久此牛人辞职。估计此牛人学术生涯也完了。
估计此人多年以来的文章合作者也可能正在惶惶不可终日。
学术界水也不浅，震惊啊！
☆─────────────────────────────────────☆
huaqizhiqing (Huaqizhiqing) 于 (Sat Feb 2 10:02:56 2013, 美东) 提到:
能不能说的详细一点？
☆─────────────────────────────────────☆
whoiwere (dddddddd) 于 (Sat Feb 2 10:24:... 阅读全帖 |
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s********r
发帖数: 19 | 5 Hi
Today, I have been looked down by an indian guy in my
company because I was confused by FET transistor. what a
shame! I just regard FET transistor as bipolar transistor.
How come?
I was graduated from Dept of materials science of USTB. I
remember the teacher taught me electronic technology is Xie
Chenxi. I doubt if he taught me about FET transistor or not. |
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c**i
发帖数: 6973 | 6 (1) First off, I am a biologist by training. I did take physics 101 in
college, but never took quantum physics, to my eternal regret.
(2) When I prepared the original posting, I read this though I did not cite
it (but this report is the basis of my statement regrading Intel
announcement--"yesterday").
Brooke Crothers, A peek into the future of Intel processors. CNET, Oct. 19,
2010.
http://news.cnet.com/8301-13924_3-20020078-64.html
(15 nm in the lab)
(3) About your question, first let's hear wha... 阅读全帖 |
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l*******l
发帖数: 10 | 7 用hspice模拟wide mos transistor的时候,比如说400/0.8,
因为实际电路一般都是folded transistor而不是单个很宽的
管子,我应该怎么写这个管子? 是很多小管子并联,还是一个
mos w=400 l=0.8? mos管的spice model会自动根据w和l选择合适
的几何尺寸么(就是说自动选择相应于folded transistor的参数
而不是单宽管的参数)? 很多小管子并联好象也不等价于folded
transistor?
bow~~ |
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f*****0
发帖数: 489 | 8 another solution is to use germanium transistors. those suckers turn on at 0
.2v vs. 0.6v for a silicon transistor.
that is an almost perfect solution for you: germanium transistors don't turn
completely on. but you can use it to drivea mosfet / silicon tansistor.
the old 3ax31 from China probably go for cents now, and nte has a lot of
germanium transistors. |
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g*********n
发帖数: 808 | 9 GaAs vs. Si from wikipedia
Comparison with silicon
GaAs advantages
Some electronic properties of gallium arsenide are superior to those of
silicon. It has a higher saturated electron velocity and higher electron
mobility, allowing gallium arsenide transistors to function at frequencies
in excess of 250 GHz. Unlike silicon junctions, GaAs devices are relatively
insensitive to heat owing to their wider bandgap. Also, GaAs devices tend to
have less noise than silicon devices, especially at high fre... 阅读全帖 |
|
l****o
发帖数: 2909 | 10 看看当年的求职信：
Dear Sir/Madam:
I am a final year Ph.D student of Physics Department of University of
Manchester, UK. I am majoring in device physics and nanotechnology. I
submitted my thesis in Dec. 2005, I am waiting for my viva now.
The title of my thesis is Fabrication, Characterization, and Measurement of
Atomically Thin Carbon Devices. I have developed original techniques of
fabricating field effect transistors based on atomically thin graphite films
, sometimes even on single layer graphene fil... 阅读全帖 |
|
发帖数: 1 | 11 中国IGBT真的逆袭了吗？
编者按：近日，CCTV2做了中国芯生存状态系列报道，主要谈了中国IGBT的进展，本来
这事一件好事，但是有一些好事者认为中国IGBT已经赶美欧，超日了，这种盲目的乐观
对于中国集成电路的建设，不是一件好事，我们不妨来看一下中国IGBT的真实状况。
我们先从什么是IGBT说起。
一说起IGBT，半导体制造的人都以为不就是一个分立器件(Power Disceret)嘛，都很瞧
不上眼。然而他和28nm/16nm集成电路制造一样，是国家「02专项」的重点扶持项目，
这玩意是现在目前功率电子器件里技术最先进的产品，已经全面取代了传统的Power
MOSFET，其应用非常广泛，小到家电、大到飞机、舰船、交通、电网等战略性产业，被
称为电力电子行业里的「CPU」，长期以来，该产品（包括晶片）还是被垄断在少数IDM
手上(FairChild 、Infineon、TOSHIBA)，位居「十二五」期间国家16个重大技术突破
专项中的第二位（简称「02专项」）
从功能上来说，IGBT就是一个电路开关，用在电压几十到几百伏量级、电流几十到几百
安量级的强电上的。（相对而言，手机、... 阅读全帖 |
|
发帖数: 1 | 12 2017-04-08 11:17
编者按：近日，CCTV2做了中国芯生存状态系列报道，主要谈了中国IGBT的进展，本来
这事一件好事，但是有一些好事者认为中国IGBT已经赶美欧，超日了，这种盲目的乐观
对于中国集成电路的建设，不是一件好事，我们不妨来看一下中国IGBT的真实状况。
我们先从什么是IGBT说起。
一说起IGBT，半导体制造的人都以为不就是一个分立器件(Power Disceret)嘛，都很瞧
不上眼。然而他和28nm/16nm集成电路制造一样，是国家「02专项」的重点扶持项目，
这玩意是现在目前功率电子器件里技术最先进的产品，已经全面取代了传统的Power
MOSFET，其应用非常广泛，小到家电、大到飞机、舰船、交通、电网等战略性产业，被
称为电力电子行业里的「CPU」，长期以来，该产品（包括晶片）还是被垄断在少数IDM
手上(FairChild 、Infineon、TOSHIBA)，位居「十二五」期间国家16个重大技术突破
专项中的第二位（简称「02专项」）
从功能上来说，IGBT就是一个电路开关，用在电压几十到几百伏量级、电流几十到几百
安量级的强电上的。（相对而言，... 阅读全帖 |
|
k*****x
发帖数: 713 | 13 信息不错，赞一个，
龙芯3B 0.583B transistors, 299.8mm area,
光从这个看，ASIC 就做得很不怎么样了
可比的是65nm
POWER6 0.789B transistors, 341mm area
Quad-Core Itanium Tukwila 2B transistors, 700mm area |
|
发帖数: 1 | 14 2017-04-08 11:17
编者按：近日，CCTV2做了中国芯生存状态系列报道，主要谈了中国IGBT的进展，本来
这事一件好事，但是有一些好事者认为中国IGBT已经赶美欧，超日了，这种盲目的乐观
对于中国集成电路的建设，不是一件好事，我们不妨来看一下中国IGBT的真实状况。
我们先从什么是IGBT说起。
一说起IGBT，半导体制造的人都以为不就是一个分立器件(Power Disceret)嘛，都很瞧
不上眼。然而他和28nm/16nm集成电路制造一样，是国家「02专项」的重点扶持项目，
这玩意是现在目前功率电子器件里技术最先进的产品，已经全面取代了传统的Power
MOSFET，其应用非常广泛，小到家电、大到飞机、舰船、交通、电网等战略性产业，被
称为电力电子行业里的「CPU」，长期以来，该产品（包括晶片）还是被垄断在少数IDM
手上(FairChild 、Infineon、TOSHIBA)，位居「十二五」期间国家16个重大技术突破
专项中的第二位（简称「02专项」）
从功能上来说，IGBT就是一个电路开关，用在电压几十到几百伏量级、电流几十到几百
安量级的强电上的。（相对而言，... 阅读全帖 |
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m****1
发帖数: 736 | 15 http://www.nae.edu/Projects/MediaRoom/20095/130169/130172.aspx
New Members
Atwater Jr., Harry A., Howard Hughes Professor of Applied Physics and
Materials Science, California Institute of Technology, Pasadena. For
contributions to plasmonics.
Balakrishnan, Hari, professor of computer science, Massachusetts Institute
of Technology, Cambridge. For contributions to wired and wireless networks
and distributed systems.
Bardasz, Ewa A., president, ZUAL Associates Consulting, Mentor, Ohio. For
novel au... 阅读全帖 |
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p*********8
发帖数: 957 | 16 1. the speed of the transistor is determined by the size, usually the width
of the transistor. bigger size is faster
2. the minimum length of the transistor
3. no idea
4. it depends on the process. 45nm and 28nm are different.
I will try to look the #3 later see if I know something
are
resolution? |
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v**********6
发帖数: 86 | 17 已经gg,记得的一些题目分享给大家，同时也看看大家有什么解法，自己现在还不是很
确定:) 因为是一个architect的职位，所以不是纯软件的问题，有的可能需要一些
power的背景知识。
1. Suppose we have 2 pipelined hardware multipliers(or some other hardware).
One is working at 1GHz with 2 operations executed in parallel at the same
time. The other one is at 500GHz with 4 operations. Suppose we have
transistors of 3 types(low leaky(30%),middle leaky(50%) and high leaky(70%))
and here leaky means leakage power of the transistor. Which multiplier
should we use considering the 3 types ... 阅读全帖 |
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c****p
发帖数: 6474 | 18 1. Suppose we have 2 pipelined hardware multipliers(or some other hardware).
One is working at 1GHz with 2 operations executed in parallel at the same
time. The other one is at 500MHz with 4 operations. Suppose we have
transistors of 3 types(low leaky(30%),middle leaky(50%) and high leaky(70%))
and here leaky means leakage power of the transistor. Which multiplier
should we use considering the 3 types of transistor?
P_dynamic = alpha * f（^2？） * V * C
P_static = V * C * 1/f
第一个f是两倍，C是一倍。第二个f低，C大于... 阅读全帖 |
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r****p
发帖数: 1854 | 19 你这个应该不是很难, 最简单的解决方法就是把把transistor 1撬起来.如果地面4和3
差不多是在同一个高度的话.撬起来以后中间会有一条缝,但是应该正好可以被洗衣机盖
住.
比较讲究的做法就应该是:
1. transistor 1撬起来
2. 把白色的trim board 2 也撬起来.
3. 拆掉3那几排木地板.难易程度取决于地板是如何安装的,如果当初是prefinished的
拼接的地板,那时最容易的.如果是用钉子甚至用胶,最好找contractor.
4.去买和4match的材料,把地板4 向外延伸.
5. 把transistor 1, 白色的trim board 2装回去. |
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g******z
发帖数: 5809 | 20 In-plane switching is an LCD technology which aligns the liquid crystal
cells in a horizontal direction. In this
method, the electrical field is applied through each end of the crystal, but
this requires two transistors for
each pixel instead of the single transistor needed for a standard thin-film
transistor (TFT) display. This results
in blocking more transmission area, thus requiring a brighter backlight,
which will consume more power,
making this type of display less desirable for notebook c |
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B*********e
发帖数: 909 | 21 This is referring to 3D transistor, but not 3D IC packaging.
3D transistor (semiconductor) --> Moore's law
3D packaging (TSV, FO-WLP,......) --> More than Moore
Both are vying to be the future for IC, from different level of architect.
The high-k gate and 3D transistor advantages make Intel 1-2 nodes ahead of
competitions in logics. But as of cost, might be high, as many more steps
are needed for this 22nm HVM ?? |
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w**7
发帖数: 5258 | 22 http://www.4-traders.com/FUJITSU-LIMITED-6492460/news/FUJITSU-L
Key Features of MB86S22AA:
Seventh-generation Milbeaut image processing
The chip delivers greatly improved optical correction capabilities through
an updated image processing flow, a new noise filter designed to achieve
balance between resolution and noise suppression, a newly developed circuit
for correcting focus drop-off at the edges, and improved distortion
correction and purple fringing countermeasures. MB86S22AA includes a new... 阅读全帖 |
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g*q
发帖数: 26623 | 23 TTL: transistor-transistor logic
So T should be transistor. |
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G*******s
发帖数: 4956 | 24 google结果：
LGBT
LGBT - Wikipedia, the free encyclopedia
en.wikipedia.org/wiki/LGBT
LGBT is an initialism that collectively refers to "lesbian, gay, bisexual, a
nd transgender" people.
LIGBT
LIGBT - Lateral Insulated-Gate Bipolar Transistor
www.acronymfinder.com/Lateral-Insulated_Gate-Bipolar-Transistor-...
Acronym Finder: LIGBT stands for Lateral Insulated-Gate Bipolar Transistor.
This definition appears very rarely. |
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d***a
发帖数: 13752 | 25 呵呵，x86解码单元用了5%的transistor，所以它的耗能就是5%，这是你说的吧？
最后你也没有认错，对吧？
实际上，一个功能元件的动态耗能，不仅要看它的transistor count
还要看transistor的activity程度
而解码单元是处理器中非常活跃的部分，每条指令都要解码...
你说的别的point，也基本是错的，多数是理解上的错误
这个楼歪得厉害了... |
|
c**i
发帖数: 6973 | 26 John Markoff, To Enhance Chip Speed, Intel Enters Third Dimension. New York
Times, May 5, 2011.
http://www.nytimes.com/2011/05/05/science
/05chip.html?_r=1&scp=1&sq=INTEL%20dimension&st=cse
("Intel is on track for 22-nanometer manufacturing later this year" with the
Finfet 3-D design)
Note:
(a) Wall Street Journal today puts it "early 2012."
(b) David Manners, TSMC waiting till 20nm to introduce 3D transistors.
ElectronicsWeekly, May 5, 2011.
http://www.electronicsweekly.com/Articles/2011/05/05
... 阅读全帖 |
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d******c
发帖数: 2407 | 27 The Landscape of Parallel Computing Research - UC Berkeley EECS
1. Old CW: Power is free, but transistors are expensive.
· New CW is the “Power wall”: Power is expensive, but transistors are “
free”. That
is, we can put more transistors on a chip than we have the power to turn on.
2. Old CW: If you worry about power, the only concern is dynamic power.
· New CW: For desktops and servers, static power due to leakage can be 40%
of
total power. (See Section 4.1.)
3. Old CW: Monolithic uniprocessors ... 阅读全帖 |
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f**o
发帖数: 2 | 28 Another hot area is compound semiconductor electronic devices, such as high
electron mobility transistors, hetero-junction bipolar transistors, metal-
semiconductor field effect transistors... As you may have known, these devices
are very important in wireless communication, fiber-optic communication, and
microwave electronics. Of course, there are still a lot of research interests
in silicon devices, as the industry is moving to 300mm fab and 0.18/0.15 micron
technology. |
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f*****0
发帖数: 489 | 29 making a power supply that can output 0v, and goes over 0-150v is pretty
difficult.
you didn't specify maximum current, but assume that it is quite small (<10ma
), you may be able to just use a typical linear supplier (emitter follower)
where you use your 0-5v signal to control a small signal transistor sitting
on the base of a large power transistor to control an output voltage.
However, the power dissipation over that power transistor will be
significant (like 1.5w) and would definitely need a |
|
f*****0
发帖数: 489 | 30
because very rarely you need a chip to level shift. most often, it is
done with a simple transistor. all you need to do is to use a
transistor (NPN or PNP, depending on how you want to wire it) across +5v
and -5v so that the transistor is saturated when the input is in one
state, and off when the input is in another state.
you will likely need a zener / LED to help you do that. |
|
ET
发帖数: 10701 | 31 回答这个问题，两个model 参数你可以看一下，
一个是af, 一个是kf.af 一般近似为1. 剩下的就是kf.
flick noise power 是正比与kf.
但是在<100nm， flicker noise power的计算公式有变化。
这个问题的严格问法应该是在何种条件下，一个channel length显然不够。 因为flick
er noise 反比与transistor area w*L.
同时，也是current的函数。
如果你问，在同样transistor area的情况下，which techhnology has better flicke
r noise performance? 或在同样的current 流过transistor下，flicker noise perfo
rmance..
corner frequency随着featured size decrease 而increase dramatically.
比如90nm下的corner frequency可以到MHZ ～ 10MHz. 65nm以下可能接近GHz.
而0.5um可能只是在hundr |
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b*********y
发帖数: 830 | 32 my 2 cents. don't know if it is rite.
1, the magnitude of the fundamental freq component of a squre wave has a pi/
2 relationship with the amplitude of the square wave, which means higher
conversion gain for square wave LO.
2, in current switching mixer like gilbert cell, sine LO will result in more
noise since the both of RF differential pair maybe on at some time so they
are not degenerated by the tail current source transistor controlled by the
LO. for sqaure wave LO, all the time, only one t... 阅读全帖 |
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c*******c
发帖数: 726 | 33 帮转，朋友是hiring manager，有意可站内私信
Broadcom Memory Designer, All level, Irvine, CA
----------------------------------------------------------------------------
------
Job Description:
Memory Circuit Design Engineer
We are looking for energetic and passionate memory design engineers to join
our Central Engineering Group and be part of an elite memory team
responsible for the development of memory compilers and custom macros of all
types on the bleeding edge of process technology. Typically requires a
m... 阅读全帖 |
|
f***n
发帖数: 438 | 34 【 以下文字转载自 Belief 讨论区 】
发信人: Godwithus (神与我们同在), 信区: Belief
标 题: LGBT和LIGBT
发信站: BBS 未名空间站 (Sat May 12 07:19:56 2012, 美东)
google结果：
LGBT
LGBT - Wikipedia, the free encyclopedia
en.wikipedia.org/wiki/LGBT
LGBT is an initialism that collectively refers to "lesbian, gay, bisexual, a
nd transgender" people.
LIGBT
LIGBT - Lateral Insulated-Gate Bipolar Transistor
www.acronymfinder.com/Lateral-Insulated_Gate-Bipolar-Transistor-...
Acronym Finder: LIGBT stands for Lateral Insulated-Gate Bipolar Transis... 阅读全帖 |
|
c******n
发帖数: 4965 | 35 来自主题: _FilmPhotography版 - 机器快装完了 换上了新curtain
能用，还没测speed
http://www.flickr.com/photos/99715082@N00/sets/72157604034393955/
今天拿万用表测了一下radio shack 的photo transistor,
万用表欧姆档给的电压就能导通，也不知欧姆档输出是多高，但是supposedly
photo transistor 至少需要3伏才行。 不管怎么样，既然这样，就试试直接连
耳机插孔，连上一看，改变光线，果然信号就有变化，得了，连电池电阻都不用了。
一个photo transistor , 一个耳机插头，连线，就可以测快门速度了。
下个周末finish |
|
g********r
发帖数: 4248 | 36 http://www-mtl.mit.edu/~alamo/
Jesús del Alamo is Donner Professor, MacVicar Faculty Fellow and Professor
of Electrical Engineering in the Department of Electrical Engineering and
Computer Science, Massachusetts Institute of Technology.
Prof. del Alamo leads a research program on Si and compound semiconductor
transistor technologies for RF, microwave and millimeter wave applications.
His students have recently fabricated nanometer-scale transistors with world
record high frequency operation. P |
|
m**d
发帖数: 21441 | 37 碘化铯(CsI）是目前探测器的主要的闪烁材料。闪烁体或荧光体层经X射线曝光后，将X
射线光子转换为可见光，而后由具有光电二极管作用的非晶硅层变为图像电信号，最后
获得数字图像。除了碘化铯外，还有数十种荧光闪烁材料可以用于线阵列X射线探测器
的开发。其中，常用的有碘化铯、钨酸镉、硫氧化轧等。
从1995年推出第一台平板探测器（Flat Panel Detector）设备以来，随着近年平板探
测技术取得飞跃性的发展，在平板探测器的研发和生产过程中，平板探测技术可分为直
接和间接两类。
（一）间接能量转换
间接平板探测器（FPD）的结构主要是由闪烁体或荧光体层加具有光电二极管作用的非
晶硅层(amorphous Silicon，a-Si)再加TFT阵列构成。其原理为闪烁体或荧光体层经X
射线曝光后，将X射线光子转换为可见光，而后由具有光电二极管作用的非晶硅层变为
图像电信号，最后获得数字图像。在间接FPD的图像采集中，由于有转换为可见光的过
程，因此会有光的散射问题，从而导致图像的空间分辨率及对比度解析能力的降低。闪
烁体目前主要有碘化铯(CsI，也用于影像增强器)，荧光体则有硫氧化钆(Gd... 阅读全帖 |
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x*****i
发帖数: 46 | 38 发信人: ibm221 (ibm221), 信区: Science
标 题: 整点干货， 针对王中林研究所的几个疑问。
发信站: 水木社区 (Sat Mar 7 21:58:59 2015), 站内
让我们再回到王中林的纳米发电机这件事情上。
1. 首先这里面存在的一个疑点就是为什么他要选择和中科院合作这样一种方式去开展
他的研究工作。
一般来说在国外如果是和应用有紧密关联的科研项目在取得初步成果之后研究者
往往采取获得商业投资的方式来继续下面的研发工作。这样的好处是可以最大化的保护
自己的利益。
假如成果或专利是在中科院或是国外大学取得的该专利的所有权属于学校或研究所。
研究者只能取得一部分分成。
而通过和风险投资等社会资本合作则可以最大化自己在这里面的收益。 例如崔屹
就成立了自己的公司研究锂电池技术。
因此自己不去成立公司进行这方面的研发多少暴露了本人对于这项技术的应用前
景的不自信以及市场对其前景的不认可。
2. 关于为什么除了在自己美国的实验室开展这方面研究外还要在国内另外开辟一片研
究所。
... 阅读全帖 |
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l*******1
发帖数: 16217 | 40 狗屁，就是这个叫Jayant Baliga只是其中一个参与者，
原始IDEA是Japan小黄人 Yamagami ，
这个东西也不是一蹴而就，而是经过很多年和很多人的改进
This mode of operation was first proposed by Yamagami in his Japanese patent
S47-21739, which was filed in 1968. This mode of operation was first
experimentally reported in the lateral four-layer device (SCR) by B. W.
Scharf and J. D. Plummer in 1978.[3] This mode of operation was also
experimentally discovered in vertical device in 1979 by B. Jayant Baliga.[4]
The device structure was referred to as a "V-groov... 阅读全帖 |
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T****t
发帖数: 11162 | 41 那是老师，哪个组里女生比男生多得多了。
应该很容易有师妹的
Alvin Tang 2D Transition Metal Dichalcogenide Electronics: Synthesis to
Applications tanga9
Zizhen Jiang RRAM Device Modeling jiangzz
Ling Li 2D Materials lingli6
Gregory Pitner Carbon Nanotubes for Transistor Applications gpitner
Joon Sohn Resistive Random Access Memory joonsohn
Xiaolin (Jasmine) Hu Bio-Electrical Sensors jxhu
Kye Okabe Resistive Random Access Memory okabe
Rebecca Park Carbon Nanotube Hysteresis rpark2
Maryann Tung Alternative Lithography Technique... 阅读全帖 |
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发帖数: 1 | 42 Lieber's contributions to the rational growth, characterization, and
applications of a range of functional nanoscale materials and
heterostructures have provided concepts central to the bottom-up paradigm of
nanoscience. These include rational synthesis of functional nanowire
building blocks, characterization of these materials, and demonstration of
their application in areas ranging from electronics, computing, photonics,
and energy science to biology and medicine.[13]
Nanomaterials synthesis. ... 阅读全帖 |
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k*****x
发帖数: 713 | 43 仔细看了一下，
龙芯3B，0.583B transistors, 583*0.41, area roughly 240mm
i7, 1.17B transistors, area 240mm |
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发帖数: 1 | 44 一项设计上的突破将使得工程师能够在单个芯片上安装 300 亿个晶体管，而芯片尺寸
仅为指甲大小。
IBM今日宣布，该公司一个研究团队在晶体管的制造上取得了巨大的突破，有望挽救越
来越濒临极限的摩尔定律，使得电子元件朝着更小、更经济的方向发展。
然而，该突破与最近大热的碳纳米管无关，而是基于一种更基础的理论方法和新制造工
艺。这项突破可能会在未来几年内满足日益增长的市场需求，也有可能为自动驾驶、人
工智能和 5G 网络的实现铺路。
今天，IBM 在京都举行的 VLSI Technology and Circuits 研讨会上宣布，IBM 与其研
究联盟合作伙伴 Global Foundries 以及三星公司为新型的芯片制造了5 纳米（nm）大
小的晶体管。
图丨IBM在 SUNY Polytechnic Institute 的科学家正在准备测试5纳米硅晶片晶体管
为了实现这个壮举，就必须在现有的芯片内部构架上进行改变。研究团队将硅纳米层进
行水平堆叠，而非传统的硅半导体行业的垂直堆叠构架，这使得5nm晶体管的工艺有了
实现可能，而这一工艺将有可能引爆未来芯片性能的进一步高速发展。
实际上... 阅读全帖 |
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m******g
发帖数: 621 | 45 本人PHD新生，真心求教读PHD的经验教训。
专业EE（MS + PHD），暂定方向比较偏TRANSISTOR/DRAM方向
大概规划：目前的想法是去工业界，目前意向的老板的学生基本上都是去了INDUSTRY。
学术圈本人不想考虑了。
例如：
1）CNT和GRAPHENE这个方向有前途么？不做学术圈的情况下？这次去CAMPUS VISIT的时
候，搞这方向的老师都说非常有前途，搞TRANSISTOR的老师说这玩意儿不太靠谱？
2）MEMS怎么样？
3）怎么能在比较正常的时间内毕业（4-5年）？我查了下老板的以前学生好像不太均匀
，有很快的4年的，也有7年的。
4）暑假大家推荐干些什么？什么时候实习比较合适？第二年
5）大家对修其他专业的MASTER有建议么？
6）MS和PHD毕业论文的方向是老师定还是自己定？我问了几个师哥师姐，好像说法不一。
谢谢大家！ |
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k******s
发帖数: 232 | 46 -长期有效-
注意：
1.公司这两年一直在招人，好的candidate甚至可以创造职位；
2.只收认真准备的简历，如果你无法清楚地解释自己简历上的东西请不要给我发简历；
3.经验很重要，扎实的基本功更重要。
Location: TX
H1B and GC（EB1A/EB2） sponsor
package: salary+stock option+bonus
Recently, Very financial healthy IC company in TX has big job opening on
digital power management department. Here is the list and intro of positions.
1) Sr. validation and testing egnineer: labview, power circuit design and
PCB layout, experienced inFPGA is a must.
2) Sr. application engineer: strong power electroni... 阅读全帖 |
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d****y
发帖数: 76 | 47 A reputable IC design company in Santa Clara is now hiring Circuit Design
Engineer with the focus on transistor level circuit design. Please find the
detailed job description at the end of this message. If you are well
qualified, we would like you to join us as soon as you can.
The employer will provide H-1b sponsorship. And following our current
practice, procedures of green card application will be initiated once you
join us as a full-time employee.
If you are interested, please drop your resu... 阅读全帖 |
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d****y
发帖数: 76 | 48 A reputable IC design company is now hiring Circuit Design Engineer with the
focus on transistor level circuit design. Please find the detailed job
description at the end of this message. If you are well qualified, we would
like you to join us as soon as you can.
The employer will provide H-1b sponsorship. And following our current
practice, procedures of green card application will be initiated once you
join us as a full-time employee.
If you are interested, please drop your resume at powergati... 阅读全帖 |
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f**d
发帖数: 184 | 49 要求如下。有意请发简历至: k********[email protected] 或者站内联系
position-1
SRAM Embedded Memory Designer
Position can be located in San Diego, CA or Santa Clara, CA
Develop memory architectures and circuit implementation techniques.
Schematic entry, simulation of major blocks, layout planning, layout
supervision and interface with CAD team for full verification and model
generation.
- Direct industry experience of at least 5 years or more designing embedded
memories for SoC applications
- Deep understanding of SRAM/R... 阅读全帖 |
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