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全部话题 - 话题: transistor
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k******s
发帖数: 232
1
来自主题: JobMarket版 - [招聘]EE专业多个职位
-长期有效-
注意:
1.公司这两年一直在招人,好的candidate甚至可以创造职位;
2.只收认真准备的简历,如果你无法清楚地解释自己简历上的东西请不要给我发简历;
3.经验很重要,扎实的基本功更重要。
请发l************[email protected]
Location: TX
H1B and GC(EB1A/EB2) sponsor
package: salary+stock option+bonus
Recently, Very financial healthy IC company in TX has big job opening on
digital power management department. Here is the list and intro of positions.
1) Sr. validation and testing egnineer: labview, power circuit design and
PCB layout, experienced inFPGA is a must.
2) Sr. application engi... 阅读全帖
l********g
发帖数: 68
2
Posted job opennings several weeks ago. Three opennings have been filled and there are still several left. Please send your resume to s*******[email protected] ASAP if you are interested.
The employer sponsors H1B, and starts green card process immediately after you join us in full time based on current policy.
Position Title: Junior Circuit Design Engineer (0-4 years experience)
Description/Qualifications: RESPONSIBILITIES:
- High performance, low power custom circuit design in Digital-IP.
- Design, ... 阅读全帖
d****y
发帖数: 76
3
A reputable IC design company is now hiring Circuit Design Engineer with the
focus on transistor level circuit design. Please find the detailed job
description at the end of this message. If you are well qualified, we would
like you to join us as soon as you can. For those who are still in the
middle of degree program, we hope you will graduate at the end of this year,
and internship starting immediately is offered and preferred. It can also
be coordinated if you schedule to graduate in May 2012... 阅读全帖
d****y
发帖数: 76
4
来自主题: JobMarket版 - VLSI job opening at Santa Clara
A reputable IC design company is now hiring Circuit Design Engineer with the
focus on transistor level circuit design. Please find the detailed job
description at the end of this message. If you are well qualified, we would
like you to join us as soon as you can. For those who are still in the
middle of degree program, we hope you will graduate at the end of this year,
and internship starting immediately is offered and preferred. It can also
be coordinated if you schedule to graduate in May 2012... 阅读全帖
b**********n
发帖数: 34
5
TFT Back-Plane Principal Scientist & Engineer
A technology company is seeking a full-time Principal Scientist / Engineer
that will serve as a key member of the technical team and be responsible for
driving our printed TFT back-plane thrust. We are innovating next-
generation printed TFT back-plate for various display applications. The
successful candidate will be a hands-on scientist and engineer. The
successful candidate will require undertaking TFT back-plane device/process
design, printing fa... 阅读全帖
b**********n
发帖数: 34
6
https://docs.google.com/document/d/1XMOGEkkOgV1Zq48HlkVIgLmZE57Lm2tkD_-
wd289V7M/pub
TFT Back-Plane Principal Scientist & Engineer
A technology company is seeking a full-time Principal Scientist / Engineer
that will serve as a key member of the technical team and be responsible for
driving our printed TFT back-plane thrust. We are innovating next-
generation printed TFT back-plate for various display applications. The
successful candidate will be a hands-on scientist and engineer. The
successful... 阅读全帖
g*********h
发帖数: 18
7
来自主题: Postdoc版 - 3个博后位置 (转载)
【 以下文字转载自 NanoST 讨论区 】
发信人: googleearth (坚决不八卦), 信区: NanoST
标 题: 3个博后位置
发信站: BBS 未名空间站 (Tue Sep 30 00:30:58 2008)
个人感觉这个组是为数不多的做有用的纳米技术的组之一。
1. Post-doc Position in Nanoscale Transistors and Nanofabrication
NanoStructure Laboratory at Princeton University has a post-doc opening in
the area of advanced nanoscale Si transistors and nanofabrication. The
candidate should have a PhD and have demonstrated abilities in design,
fabrication and characterization of nanoscale MOSFETS or nanofabrication or
n*o
发帖数: 442
8
来自主题: shopping版 - Re: TFT acitve matrix vs TFT color LCD
解释清楚一些吧.
TFT:
Abbreviation of thin film transistor, a type of LCD flat-panel display screen,
in which each pixel is controlled by from one to four transistors.
The TFT technology provides the best resolution of all the flat-panel
techniques, but it is also the most expensive.
TFT screens are sometimes called active-matrix LCDs.
HPA:
Short for High-Performance Addressing, an passive-matrix display technology
the provides better response rates and contrast than conventional LCD displays.
Although
c****g
发帖数: 18
9
Title: Fabrication of Integrated Field-Effect Transistors and Detecting
System Based on CVD Grown Graphene
ABSTRACT:
An integrated field-effect transistors based on large-area multilayer
graphene produced by chemical vapor deposition was fabricated in this work.
A planar Au sheet was used as gate electrode integrated with graphene FET to
obtain perpendicular electrical field between gate and graphene substrate.
Graphene film was transferred to cover indium tin oxides films which were
used as dra... 阅读全帖
c*******3
发帖数: 98
10
I would like to review ZnO growth manuscript.Thanks!
My CV is as follows:
JINGBO CHANG
Laboratory of Nanotech. for Sustainable Energy and Environment University of
Wisconsin-Milwaukee, 3200 North Cramer Street Milwaukee, WI 53211, USA
www.researchgate.net/profile/Jingbo_Chang/publications/
PERSONAL DETAILS
Date of Birth: 28th Sep. 1979 Gender: Male
Nationality: China Marital Status: Married
Tel. +1- 414- 688-1383 E-mail: c*****[email protected]
EDUCATIONS
☼ Post doc, major in Mechanical Engineerin... 阅读全帖
c*******3
发帖数: 98
11
来自主题: Immigration版 - Gone! 审稿机会推荐
JINGBO CHANG
Laboratory of Nanotech. for Sustainable Energy and Environment University of
Wisconsin-Milwaukee, 3200 North Cramer Street Milwaukee, WI 53211, USA
Research Highlights
 Graphene/SWNTs FET based platform for biosensor and water sensor
applications.
 Graphene based hybrid materials for high-performance lithium-ion
battery applications.
 High-performance photoresponse from SWNT/ZnO heterojunctions for UV
sensor
and solar cell applications.
 High conducti... 阅读全帖
g********n
发帖数: 50
12
来自主题: Immigration版 - 求审稿机会
电子材料方向,同时也熟悉晶体管,柔性电子,生物传感器,透明电极。
主要研究领域在于:Amorphous Oxide Semiconductor, Thin Film Transistor,
Device physics, Sol-gel chemistry, Instrumental analysis, Ion-sensitive
field effect transistor
小弟现在是高年级PhD学生,已发表12篇期刊,其中4篇一作,已有审阅过2篇文章。
麻烦私信或发邮件到 [email protected]
/* */,我可以提供简历。
谢谢大家的帮忙!
y*b
发帖数: 3190
13
http://www.sonyalpharumors.com/sony-to-work-with-invisage-on-ne
"Invisage CEO Jess Lee stated that Sony is likely to become a Invisage
partner to make the first mass production Quantum film stacked sensors in
2016. The sensors will be first used on smartphones because one of the main
advantages of the new tech is the much thinner sensor. But the new tech
could be used on larger Digital Camera sensors too because of the higher
performance. Quantum Film sensor tech explained via Wikipedia:
Quantum... 阅读全帖
H********g
发帖数: 43926
14
【 以下文字转载自 Military 讨论区 】
发信人: beijingren (to thine own self be true), 信区: Military
标 题: 用单个细胞创建晶体管,摩尔定律完蛋了
发信站: BBS 未名空间站 (Mon Jul 27 09:50:56 2015, 美东)
Researchers create transistors using a single molecule
http://www.slashgear.com/researchers-create-transistors-using-a
h**g
发帖数: 94
15
1) Transistor small signal model, gm, ft
2) Simple amplifer Gm, Rout: common source, common gate, source follower
3) Current mirror, Layout matching
4) Cascode amplifer, Cascode current mirror
5) Differential pair: gain, bandwidth, swing
6) Opamp with miller compensation
7) Opamp with feedback: resistor, capacitor
8) Bode plot, phase margin, pole shifting
9) Transistor noise model
10) Basic equations for diode and BJT
I took many phone/on-site interviews recently. All these questions were asked
j*****z
发帖数: 5306
16
CNT主要的问题是和现有silicon工艺不兼容。graphene从发现到今天也不过5年多的时
间,主要问题是ON/OFF ratio太差。前一段时间IBM还高调发布了100GHz的graphene
transistor嘛,算是很大的突破了。spintronics算是颠覆了整个electronics吧,可到
现在连一个transistor都做不出来的,更是虚无缥缈。。。反正大家都是基础研究,就
是折腾呗。谁要是押对宝了就爽翻了
r******y
发帖数: 3838
17
http://www.appleinsider.com/articles/11/03/13/inside_apples_ipa
_than_tegra_2.html
The new A5 processor used by iPad 2 incorporates Samsung's new 46nm Low
Power DDR2 memory, uses a
variable clock speed and costs about $25, a significant premium over NVIDIA'
s competing Tegra 2.
According to research performed by UBM TechInsights, Apple's larger A5 (12.
1mmx10.1mm, compared to
the 7.3mmx7.3mm A4) costs about $25 to build, making it $10 more expensive
than similar dual core
chips such as the Tegra... 阅读全帖
a***e
发帖数: 27968
18
俺说的是不会超过5%太多,这5%也不是100% active
你不会指望这个部件跑出CPU 50%功耗吧?
这种设计,浪费的transistor不多
如果一种功能大部分时间不活跃,就可能被砍
特别是在逻辑核心上,看transistor是个很有效看功耗的一级近似
cisc和risc这么多年争论没个结果,到你这就定了?
risc简单,t-count小,但是指令效率低
cisc复杂但是指令效率高,
两个对抵其实谁都没有速度功耗的绝对优势,现代的设计都往中间靠
cisc可以执行少10%的指令完成同样的活的话,
在解码器上多花点也不见得亏
32nm和40nm这种半代工艺差,功耗区别就是10~15%
最新的atom就证明x86,cisc没有什么致命的功耗缺陷
就是个实现侧重点的不同导致有先后
你老的所谓理解,特别是硬件半导体上,基本人云亦云,还是别显摆了
软件俺不懂,你们讨论俺打酱油
d***a
发帖数: 13752
19

你肯定“看transistor是个很有效看功耗的一级近似”?!
指令译码是100%的指令都要做的
别的功能单元,象乘法/除法器,利用率要低得多
二三级高速缓存,用的transistor最多
但利用率可以接近于零
功能单元之间的power density可以差得很远
这是处理器设计的常识了
a****a
发帖数: 5763
20
http://bbs.weiphone.com/read.php?tid=503923
Mac OS X 10.6即所谓的Snow Leopard操作系统已正式发售。一如既往,Apple产品光
鲜的外表下凝聚了太多艰辛的劳作。ArsTechnic的John Siracusa以其独特的、专业的
、全面的视角深入翔实地体验这款最新的操作系统。
Weiphone.com将对该综述进行翻译整理并独家连载。欢迎关注。
“Moore(摩尔)定律”在技术领域广为流传,然而某种程度上讲,也存在广泛
的误解。所谓的“Moore定律”简言之就是“计算机的速度大体会在每两年翻一倍”,
然而这并非Gordon Moore的原话。Gordon Moore在1965年的《Electronics》杂志上撰
文涉及了半导体行业的诸多问题,如果将其归结为一条“定律”,那么大致应该是:每
平方英寸的硅片上集成的晶体管数量每12个月增加一倍(the number of transistors
that fit onto a square inch of silicon doubles... 阅读全帖
o**n
发帖数: 1249
21
来自主题: Hardware版 - hdd ssd还是有很长时间共存的
他是指DRAM是用1x transistor + 1x capatitor作一个memory cell,SRAM是用6x
transistors 作一个memory cell,可是这个SRAM有啥优势阿?就算快点,现在瓶颈是
在FSB上,memory再快有啥用?
p**********r
发帖数: 1693
22
来自主题: Hardware版 - 求助:dell 显示器背光
我搜到了这个172fpb的维修方法,换下4个c5707 transistor,
http://syscon.wordpress.com/2007/07/13/dell-dell-e172fpb-lcd-backlight-repair/
附件图片是我这台的逆变板,里面标有22k的是不是高压继电器?另一个是低压?如果换transistor的话只换低
压继电器旁边的两个就可以?
c**i
发帖数: 6973
23
来自主题: Hardware版 - TSMC to 28nm this quarter
I am not an expert on semiconductor.
So This is what I will say.
It is correct that TSMC is sending out 28-nm with high-k metal gate (HKMG)
technology (in 4Q10).
However, other statements in your posting are incorrect, as far as I can
tell.
(1) Bogdan Botezatu, Intel and TSMC Go for Advanced High-k Technology.
Softpedia, Dec. 13, 2007.
http://news.softpedia.com/news/Intel-And-TSMC-Go-For-Advanced-High-k-Technology-73742.shtml
("The International Electron Devices Meeting surely was a good place f... 阅读全帖
c**i
发帖数: 6973
24
来自主题: Hardware版 - Moore's Law Hits a Snag
John Markoff, High-Tech Progress Hits Snag: Tiny Chips Use Outsize Power;
Foreseeing only modest gains in electronics. New York Times, Aug 1, 2011 (
title in print)
http://www.nytimes.com/2011/08/01
/science/01chips.html?_r=1&ref=johnmarkoff
("The problem is not that they cannot squeeze more transistors onto the
chips — they surely can — but instead * * * that all those transistors
could require too much power to run economically. They could overheat, too.")
-------------------------------------... 阅读全帖
c**i
发帖数: 6973
25
来自主题: Hardware版 - Moore's Law + Picochip
(1) Transistors | Plugging the Leaks; As physical limits bite, electronic
engineers must build ever cleverer transistors. Economist, Aug 20, 2011.
http://www.economist.com/node/21526322
Note:
(a) Jack Kilby
http://en.wikipedia.org/wiki/Jack_Kilby
(1923-2005; American; Nobel Prize laureate in physics in 2000 for his part
in the invention of the integrated circuit [also known as microchip] in 1958
while working at Texas Instruments)
(b) "Off the cuff 'extemporaneously' is 1938 Amer.Eng. colloquial... 阅读全帖
F***Q
发帖数: 6599
g****t
发帖数: 31659
27
来自主题: Programming版 - [bssd]AI血泪史
Btw, widrow - Hoff
里面的hoff 做了世界上第一个微处理器。2000 transistors。
我想恐怕今日没多少人知道他phd是神经网络学习算法.
60年代懂silicon很多是物理学家。懂信号处理的人群里面
恐怕相当部分是改行的神经网络爱好者。(另一部分可能是
自控出来的)
From intc:
In the late 1960s, there was a great deal of discussion regarding the
possibility of a computer on a chip. Ted Hoff was the first to recognize
that Intel's new silicon-gated MOS technology might make a single-chip CPU
possible if a simple enough architecture could be formed. Hoff developed
this architecture with just over 2000 transistor... 阅读全帖
b**********n
发帖数: 34
28
来自主题: Chemistry版 - Paper helps.
Analytical and Bioanalytical Chemistry
January 2006, Volume 384, Issue 2, pp 343-353
Chemical and biological sensors based on organic thin-film transistors
Adv Mater. 2012 Jan 3;24(1):34-51.Organic thin-film transistors for chemical
and biological sensing.
a********d
发帖数: 2
29
来自主题: EE版 - 请问几本书
1,Microelectronic Materials 主要想了解:
Principles of materials science applied to materials issues in fabrication,
operation, and reliability of microelectronic devices.
2,Semiconductor Device
Applications of transport phenomena in semiconductors to explain the
terminal
behavior of a variety of modern electronic devices such as bipolar junction
transistors, MOS structures, and field effect transistors.
请问有什么书推荐吗?(最好是从刚入门说起)
多谢
j***u
发帖数: 26
30
来自主题: EE版 - DC offset of integrator
I designed an integrator, it is actually a low pass filter, a simple one
stage differential amplifier with one terminal input short to the output and
connected to a capacitor. In this case, the input is a signal, the output
would be the input average voltage. All the transistors work in the weak
inversion. The integrator has a tail current of 100pA. The transistor were
sized to have a DC offset of 5mV, that means the output is 5mV apart from
the input DC level. However, when I tested this integr
j***u
发帖数: 26
31
来自主题: EE版 - DC offset of integrator
the transistor pair has the same size. I estimate the offset according to
the mismatch of transistors
j***u
发帖数: 26
32
来自主题: EE版 - DC offset of integrator
All transistors work in subthreshold. The simulation results show the dc
offset is less than 1mV. 5mV offset is calculated according to the Vth
variance supplied by the process. I haven't run the corner simulations. But
I test serveral chips, they gave me similar DC offset.
So you think, 100pA tail current should not be the reason to cause this big
DC offset? The leakage of transistors is neglectable comparing to 100pA,
right?
j***u
发帖数: 26
33
来自主题: EE版 - DC offset of integrator
All transistors work in subthreshold. The simulation results show the dc
offset is less than 1mV. 5mV offset is calculated according to the Vth
variance supplied by the process. I haven't run the corner simulations. But
I test serveral chips, they gave me similar DC offset.
So you think, 100pA tail current should not be the reason to cause this big
DC offset? The leakage of transistors is neglectable comparing to 100pA,
right?
r*********e
发帖数: 281
34
要不要考虑noise margin
比如一个1KV的transistor
在Vds=1kV, Vgs=0.5V时是complete pinch-off
Vgs>0.5V, Id就会指数上升
会不会因为一点noise, 导致transistor unintentionally turn-on, 给烧掉?
多谢多谢!
f********o
发帖数: 2181
35
来自主题: EE版 - 问个oscillator仿真的问题
在做一个LC-OSC
发现layout以后提取的网表怎么也不起振
我把extraction的设置设成只提取电路元件不提寄生RC
然后手动把寄生二极管删了也跑不起来
因为layout后出现几千个transistor并联
手动查很麻烦, 不过LVS是正常的
这样extracted netlist应该和schematic一样吧, 因为没有任何寄生元件
是不是并联的transistor和在schematic里面设置成finger有很大差别?
从schematic的仿真来看tuning range蛮大的
不知道这些变化是不是有问题?
实在想不明白, 请高手指教
多谢
d*b
发帖数: 130
36
I am looking for one old transistor, all the websites selling this
transistor requires order quantity >500, how can I buy small quantity like
10? Thanks.
model: S4008LS3
h**g
发帖数: 94
37
1) Transistor small signal model, gm, ft
2) Simple amplifer Gm, Rout: common source, common gate, source follower
3) Current mirror, Layout matching
4) Cascode amplifer, Cascode current mirror
5) Differential pair: gain, bandwidth, swing
6) Opamp with miller compensation
7) Opamp with feedback: resistor, capacitor
8) Bode plot, phase margin, pole shifting
9) Transistor noise model
10) Basic equations for diode and BJT
I took many phone/on-site interviews recently. All these questions were asked
i*******e
发帖数: 27
38
band structure, phonons, transport equations for charges and mechanisms of
generation and recombination of carriers. Study of establishment of physical
and phenomenological models for three basic features of the electronics:
the PN junction, the bipolar transistor and MOS transistor.
就这个方面的 谢谢 d****[email protected]
a******e
发帖数: 80
39
来自主题: EE版 - 求一电路的出处
以前看到过,但现在只记得电路,不记得出处了,哪位大虾提示一下
其实就3个transistor,其中一个diode-connected,另外两个来bias主transistor的
body voltage,这样来确保body voltage总是source和drain中最低的。
图片在
谢谢
f*****0
发帖数: 489
40
来自主题: EE版 - 焊个什么好?

it depends on what devices you have. it is fairly difficult to get a
real radio out of transistors.
But it is quite easy to get a pre amplifier or a headphone amp - they
don't need to deliver a lot of power and small signal or medium power
transistors will do.
f*****0
发帖数: 489
41
来自主题: EE版 - 焊个什么好?

those transistors have ft around 200 - 300mhz. they are at best good for
IF amplification and you will need true RF transistors to amplify OTA
signals.
pretty much all OTA receivers have AGC and you don't really need a
booster unless the receiver really sucks.
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