z*********n 发帖数: 35 | 1 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕
bala, bala,还说了不少优点
请教大牛这是什么技术,那里可以找到reference呵?
还有,in terms of gain, poly-emitter 比 metalization 好在哪里?
要从carrier flow 上面解释
多谢了,大虾解惑 | l*****x 发帖数: 3431 | 2 难道是为了抑制subatrate noise coupling
看到一片类似的paper,不过是deep N-well里头做NMOS的,也许可以帮你理点头绪
“Impact of Deep N-well Implantation on Substrate Noise Coupling and RF
Transistor Performance for Systems-on-a-Chip Integration” K.Chew,etc.,
ESSDERC2002
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| s***e 发帖数: 35 | 3 P-well里应该是NMOS吧?triple well technology?
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| h***i 发帖数: 634 | 4 PMOS做P-Well里?
回封信给他
问清楚点
以表示你的强烈兴趣:)
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| r*********e 发帖数: 281 | 5 not sure about the pmos in pwell stuff.
poly-emitter has higher gain because the current enjected from the base to
the emitter is lower.
This current component depends on the gradient of excess minority carriers
in the emitter. In the metal/Si case, the density of excess minority
carriers at the metal/Si interface is virtually 0. In the poly/Si case, the
density of excess minority carriers at the poly/Si interface is greater than
0, leading to lower gradient of excess minority carrier density an
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| r*********e 发帖数: 281 | 6 not sure about the pmos in pwell stuff.
poly-emitter has higher gain because the current enjected from the base to
the emitter is lower.
This current component depends on the gradient of excess minority carriers
in the emitter. In the metal/Si case, the density of excess minority
carriers at the metal/Si interface is virtually 0. In the poly/Si case, the
density of excess minority carriers at the poly/Si interface is greater than
0, leading to lower gradient of excess minority carrier density an | c******n 发帖数: 50 | 7 说清楚点嘛,写写你的面经。
P-well里做PMOS?P-type 的LDMOS却是可以坐在P里面,但是这个region是不是叫做P-
well? 那个公司是做analog, power management的,还是做65nm digital logic的?
PET,估计是发射效率高(minority carrier diffusion length is smaller),然后
gain就高吧。
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| z*********n 发帖数: 35 | 8 多谢大家,这个版的确是有不少牛人的
我是半路出家,
等结束以后一定奉上面经感谢大家
【在 z*********n 的大作中提到】![](/moin_static193/solenoid/img/up.png) : 好像问我知不知道有PMOS 做在 P-well 里面的,弄得我晕 : bala, bala,还说了不少优点 : 请教大牛这是什么技术,那里可以找到reference呵? : 还有,in terms of gain, poly-emitter 比 metalization 好在哪里? : 要从carrier flow 上面解释 : 多谢了,大虾解惑
| z*********n 发帖数: 35 | 9 Catbrain, Rosemarlene, Linkfox, thanks, very good suggestion.
I don't know if I will make a device career yet.
But it is so nice to meet you guys here to share the professional opinions | i******n 发帖数: 15 | 10 i've heard of NMOS in nwell, actually, it is used as moscap |
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