a******e
发帖数: 80 | 1 我又加了一些细节在最后。谢谢
请教一个问题
关于不同length的transistor的Vt
我知道short channel effect，当channel length越来越小的时候，Vt也会越来越小。
textbook上说当channel足够长的时候，Vt就趋于稳定，与channel length无关了
但为什么我得到了如下的仿真结果（测试结果也是如此），length都到16um了，Vt还没
稳定，而且L越大，Vt的绝对值越小，趋势与教科书上讲的是反方向。
我得到的结果如下
一个PMOS transistor，如果W＝40um， L＝2um，那么Vt＝－0.879V，
一个PMOS transistor，如果W＝40um， L＝4um，那么Vt＝－0.847V，
一个PMOS transistor，如果W＝40um， L＝8um，那么Vt＝－0.820V，
一个PMOS transistor，如果W＝40um， L＝16um，那么Vt＝－0.806V
做测试的PMOS来自SOI process，transistor的minimum length是1.2um
哪位大虾讲一讲，或是介... 阅读全帖 |
|
a******e
发帖数: 80 | 2 这个是什么工艺，minimum length 1.2 um。自己实验室的吗？你oxide多厚？
回答：这个是0.6um的 silicon-on-insulator的工艺。但0.6um指的是5V的transistor
，我用的是工艺里的medium voltage transistor（可以tolerate 12V rating），这些
transistor的minimum length是1.2um。这是comerrical 的process。oxide多厚记不得
了，我现在身边没有proc spec。 |
|
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a***u
发帖数: 9 | 4 Wow! Can you make polymer with 0.3 eV band gap? If that is true, there will be
many things you can do, such as infrared LED, infrared detector and many other
things. The military might be very interested in that. For transistor, there
are many other complications. For inorganic transistor, the leakage current in
the off state (at zero gate voltage) can be calculated based on the materials
properties, such as the doping level. Polymer transistor operates in
accumulation mode, which is very differ |
|
P**********e
发帖数: 2964 | 5 【 以下文字转载自 Science 讨论区 】
发信人: Physmolecule (斐丝~), 信区: Science
标 题: Scientists create world's first molecular transistor（zz）
发信站: BBS 未名空间站 (Sun Dec 27 23:23:01 2009, 美东)
Scientists create world's first molecular transistor
The team, including Mark Reed, the Harold Hodgkinson Professor of
Engineering & Applied Science at Yale, showed that a benzene molecule
attached to gold contacts could behave just like a silicon transistor.
The researchers were able to manipulate the molecule's different energ |
|
a*****c
发帖数: 3525 | 6 Fastest Graphene Transistor Yet
IBM researchers report the creation of a transistor that operates at 26 GHz,
the highest frequency yet achieved for the 2-D carbon material
Elizabeth K. Wilson
New progress in the blossoming field of graphene-based electronics comes
from IBM researchers, who report the creation of a graphene transistor that
operates at 26 GHz, the highest frequency yet achieved (Nano Lett., DOI: 10.
1021/nl803316h). The researchers also show that the performance of these
transisto |
|
a***n
发帖数: 578 | 7 【 以下文字转载自 Physics 讨论区,原文如下 】
发信人: argon (argon), 信区: Physics
标 题: band gap and transistor
发信站: Unknown Space - 未名空间 (Thu Feb 19 17:40:46 2004) WWW-POST
For making a transistor, it is better to have a small band gap or a large band
gap semiconductor materials? Thanks. |
|
c***u
发帖数: 843 | 8 【 以下文字转载自 EE 讨论区 】
发信人: cyzhu (anomalous), 信区: EE
标 题: 版上有做GaAs transistor (RF)之类的device engineer的吗?
发信站: BBS 未名空间站 (Thu Sep 26 10:11:10 2013, 美东)
有猎头要招人. |
|
z********7
发帖数: 57 | 9 大家好，我的方向PhD是nano photonics和optical waveguide，现在工作的方向是
power switching transistor，如果有review paper的机会，请随时来联系我～ |
|
d**********n
发帖数: 3634 | 10 【 以下文字转载自 Game 讨论区 】
发信人: divinebaboon (db), 信区: Game
标 题: 有人玩Transistor么?Bastion的公司开发的
发信站: BBS 未名空间站 (Tue May 20 13:08:17 2014, 美东)
今天刚出来，上次在PAX East玩了demo，很不错，很unique。 Soundtrack就像bastion
一样好听，然后那个黑人爷爷的配音真的是legendary |
|
I***a
发帖数: 704 | 11 我现在有1个foundry提供的spectre model，描述一个transistor的 ，但是foundry没
有提供cadence里面的cell ，我现在需要做LVS， 就把foundry提供的类似的cell复制
一个新的，然后用TOOLS->CIF->Edit修改了 Base Model Name 和 Model Name 这2个参
数。 但是LVS得到的 schematic的netlist 还是用的修改前的 model name。 如何解决
呢？ |
|
ET
发帖数: 10701 | 12 search "pcell in cadence".
基本原理是： transistor level gate logic (nand, nor, xor, 3-input, etc....)
with schematic, layout, parastic extraction coming with spice model simulat
ion -》 generate timing/power info for those gates (called pcell).
你建了个ic usa group， 然后听起来似乎你啥也不知道， 建这个group为何？ |
|
q*******n
发帖数: 52 | 13 the two cascode transistors, normally use same size or different size?
Thanks. |
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a******e
发帖数: 80 | 14 在cadence里用foundry提供的model做的DC operating point仿真，
所有bias condition都固定，width也固定，然后做length的sweep
发现length越大，Vt越小，当然也不会无限小，到一定程度就饱和了
根据Sze那本semiconductor physics书里说的，不是应该length越小，Vt越小吗，
我现在的初步解释（不知道对错）是，Sze书里讨论的是short channel effect,都是几
十nm，或是百nm级的length。而我的transistor是high－voltage的，最小的channel
length都是1.2um。 |
|
a******e
发帖数: 80 | 15 1。bias condition相同是指：同样的Vgs Vds？还是同样的Vgs, Id？确定是饱和区吗？
回答：所有transistor的gate，source，drain，body都是相同的，Id不同，理论上来
说，Id应该取决于W/L,当然还有别的因素。肯定是饱和区。
2。一般model file里面，Vth0的值是按照L，W范围分区给出的，本身就是不同的，你
可以看一下。我对modeling也不熟，所以我也不好解释。design的时候Vth的绝对数字
并不是很关键，一般只要留足margin，知道不是subthreshold就好了。
回答：嗯。这个我也了解。我现在是是想从理论的角度来解释是什么effect导致Vt不同
的。
3。为什么电流镜要做L的scale？这样不容易match啊。由于L不用导致ro不同，导致每
一路的输出电阻不同，这样线性比较差。
回答：没错，线性肯定差，这个我知道。但这个设计需要我们vary length，
application决定的。 |
|
l****o
发帖数: 184 | 16 same results when simulating 0.5um standard CMOS process. Some ref here for you: Operation and Modeling of The mos transistor Page 260-269. |
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i**c
发帖数: 960 | 17 organic flexible transistor，中文反义是有机柔性
这个里面的有机是什么意思？什么材料算是有机？
非常感谢！ |
|
i**c
发帖数: 960 | 18 oh,多谢。
但是好像看到organic flexible transistor很普遍，是因为是用碳打印的吗？ |
|
R********n
发帖数: 417 | 19 transistor能发光么？ 呵呵 OLED和OTFT用的是不同材料 |
|
z********7
发帖数: 57 | 20 大家好，我的方向PhD是nano photonics和optical waveguide，现在工作的方向是
power switching transistor，如果有review paper的机会，请随时来联系我～ |
|
c***u
发帖数: 843 | 21 power switching transistor是做silicon的吗？ |
|
z********7
发帖数: 57 | 22 material is GaN-on-bulk GaN, structure is vertical transistor |
|
l*****o
发帖数: 82 | 23 It's a strange question.
IMO, as long as a the gap is much large than thermo electron/exciton/...
energy(kT, k is the boltzman constant, T is the temperature), it's OK.
But if u prefer make some inorganic semiconductor transistor alternate,
just choose similar gap. |
|
a***u
发帖数: 9 | 24
hole
is
The question you asked is so complicated that very few people really know the
answer. Since I am not working on polymer transistor, I know no more than you
do. First of all, how do we define intrinsic mobility? For inorganic
semiconductor, it is quite simple. Because people can make high quality single
crystal. So we can really study how the mobility is dependent on temperature
and impurity level (phonon scattering and impurity scattering). On the other
hand, polymer is polycrystalline |
|
b*********a
发帖数: 110 | 25 七点开始做lab现在凌晨一点了才回来，明天还有9点的课呢。一路又黑又冷自己走回家，
又困又累还负了伤，别人也有烫伤的可都没我这么衰。2N3096没冷却彻底我就开始拆卸，
结果左食指被烫了直径4，5mm的大泡。15分钟内，又用右手拆卸CA3096 transistor
array被扎到右食指指甲缝里，当即鲜血直流。现在两个手指头都暂时残废了疼得我咬牙
切齿。。。最近怎么这么倒霉呀，要死乐~~~~5555555555 |
|
f***h
发帖数: 1 | 26 Nanotechnology: Electronics at the atomic scale
Cover art, Felice Frankel.
Two papers this week show the potential of molecules as nanometre-scale
electronic components. By varying the structure of specially designed
molecules containing transition-metal atoms cobalt in one case and a pair of
vanadium atoms in the other transistor characteristics can be adjusted and
current flow channelled through one quantum state. The cover is a
representation of a cobalt-terpyridinyl coordination complex (rig |
|
f**d
发帖数: 768 | 27 这是一本计算神经科学的优秀著作，全文拷贝这里（图和公式缺），有兴趣的同学可以
阅读
如需要，我可以分享PDF文件（－－仅供个人学习，无商业用途）
From Computer to Brain
William W. Lytton
From Computer to Brain
Foundations of Computational Neuroscience
Springer
William W. Lytton, M.D.
Associate Professor, State University of New York, Downstato, Brooklyn, NY
Visiting Associate Professor, University of Wisconsin, Madison
Visiting Associate Professor, Polytechnic University, Brooklyn, NY
Staff Neurologist., Kings County Hospital, Brooklyn, NY
In From Computer to Brain: ... 阅读全帖 |
|
发帖数: 1 | 28 Silicon Carbide: Smaller, Faster, Tougher
Meet the material that will supplant silicon in hybrid cars and the electric
grid
Illustration: Anatomy Blue
Some technological revolutions are flashy, and some are almost invisible. We
’re quite familiar with the flashy ones; they’ve given us powerful
computers we can hold in the palms of our hands, devices that can pinpoint
our locations by way of orbiting satellites, and the ability to bank and
shop without leaving our homes.
But none of these innovat... 阅读全帖 |
|
发帖数: 1 | 29 名字叫舍恩。
德国科学家。不少Nature，Science。后来均被撤稿。
以下摘自维基百科。将军们怎么看这位白人科学家？据一位王姓的华人知名professor
透露，他去演讲，有个欧洲白人老头老是说华人professor的文章是造假造出来的数据
，华人教授气都气死了。
【舍恩事件】
舍恩事件是一起于2002年揭发的大规模学术论文造假丑闻。事件主角扬·舍恩 (Jan
Hendrik Schön) 1970年生于德国费尔登，1997年获康斯坦茨大学物理学博士学位
并留校任教，1998年加入贝尔实验室，于贝尔特拉姆·巴特洛格教授指导下做材料学研
究，2001年成为正式员工。之后的4年里，他与20多人合作在许多大型国际期刊上发表
了超过80篇论文，在《自然》和《科学》上发表的第一作者署名的论文就有17篇。这些
论文在当时被认为于分子电路、分子半导体、有机激光、高温超导和纳米科技领域取得
突破进展，震动了整个科学界。2001年，他获得了德国最重要的科学奖项之一——奥托
·克隆-韦伯银行奖。
舍恩最出名的“成就”是于2001年11月发表的单分子场效应管。他称在两层金电极之间
用含硫的有... 阅读全帖 |
|
s******v
发帖数: 4495 | 30 Intel's New Tri-Gate Ivy Bridge Transistors: 9 Things You Need to Know
ARTICLE DATE: 05.04.11
By Matthew Murray
Intel announced today that its upcoming Ivy Bridge processing
platform, which will be based on a 22-nm version of its second-
generation Core (aka Sandy Bridge) microarchitecture, will also
utilize a new transistor technology called Tri-Gate.
The company says that Tri-Gate transistors, the first to be truly
three-dimensional, mark a major change in the way the industry has
done thing... 阅读全帖 |
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a*****c
发帖数: 53 | 31 Rise to prominence[edit]
Schön's field of research was condensed matter physics and
nanotechnology.[3] He received his Ph.D. from the University of Konstanz in
1997. In late 1997 he was hired by Bell Labs, located in New Jersey, United
States. There, he worked on electronics in which conventional semiconducting
elements (such as silicon) were replaced by crystalline organic materials.
Specific organic materials can conduct electrical currents, and in a so-
called field-effect transistor (a ... 阅读全帖 |
|
P*****l
发帖数: 438 | 32 1954 First transistor radio;(Regency TR-1, on market for 49.99$, just
contain 4 transistors). This one should be easy for current nano scientists
to replicate to demonstrate that their claimed molecular transistor is
really functioning.
Ten years after the invention of transistor:
1947 December 16, invention of point-contact transistor
1948 January, Shockley invents junction transistor; The military is
informed about transistors
1949 First Germanium transistors sold
1950 Transistors developed... 阅读全帖 |
|
g********e
发帖数: 1638 | 33 195 黄佳
(chem.) 男 1980/11/23 同济大学 工程与材料科学 2009年05月毕
业于[美国]约翰霍普金斯大学 [美国]马里兰大学 博士后研究员/Research
Associate
这位自己有简历在网上，
http://www.linkedin.com/pub/jia-h/8/b10/3b9
第一作者文章很少，有一个JACS，
Publications
Applications of ZnO in organic and hybrid solar cells
Energy & Environmental Science
2011
Authors: Jia H.
(1) Huang, Jia*; Yin, Zhigang; Zheng, Qingdong. Energy & Environmental
Science. (2011) Accepted, *corresponding author
Polymeric Semiconductor/Gra... 阅读全帖 |
|
l**j
发帖数: 40 | 34 看看下面就知道我们在美国的大部分人很WS.
代表性论文（引用率>1300, H-index=23）
1. Y. Z. Long, L. Liao*, X. F. Duan, Z. Y. Fan*, Large-scale
Integration of Semiconductor Nanowires for High Performance Flexible
Electronics ACS Nano (In press)
2. L. Liao, J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y.
Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors
and Circuits on Glass Nano Lett. (In Press).
3. L. Liao, X. F. Duan Graphene-based RF devices Materials Today (In
Press).
4. ... 阅读全帖 |
|
a*********r
发帖数: 14 | 35 对不起，我还真是给武大化学系留了面子。
莫非你就是其中一件丑事的主角，干嘛一触即发，破口大骂呢？
袁荃做的是还不错，但不意味武大化学系就有多好了。
举例来说，即使袁荃和另外一位新招的楚天特聘教授傅磊相比，也能看出武大化学系在其中有没有猫腻了。
首先补充一点：袁荃的老公叫廖蕾，也是武大物理系新招的楚天特聘教授，可以作为很好的对照体系。
比比三人的publication和经历，就能明显看出水平之比是:
廖蕾>袁荃>傅磊
但从袁荃却没有评上楚天特聘。
廖蕾
http://physics.whu.edu.cn/node/557
1. Y. Z. Long, L. Liao*, X. F. Duan, Z. Y. Fan*, Large-scale Integration of Semiconductor Nanowires for High Performance Flexible Electronics ACS Nano (In press)
2. L. Liao, J. W. Bai, R. Chen, H. L. Zh... 阅读全帖 |
|
a*********r
发帖数: 14 | 36 对不起，我还真是给武大化学系留了面子。
莫非你就是其中一件丑事的主角，干嘛一触即发，破口大骂呢？
袁荃做的是还不错，但不意味武大化学系就有多好了。
举例来说，即使袁荃和另外一位新招的楚天特聘教授傅磊相比，也能看出武大化学系在其中有没有猫腻了。
首先补充一点：袁荃的老公叫廖蕾，也是武大物理系新招的楚天特聘教授，可以作为很好的对照体系。
比比三人的publication和经历，就能明显看出水平之比是:
廖蕾>袁荃>傅磊
但从袁荃却没有评上楚天特聘。
廖蕾
http://physics.whu.edu.cn/node/557
1. Y. Z. Long, L. Liao*, X. F. Duan, Z. Y. Fan*, Large-scale Integration of Semiconductor Nanowires for High Performance Flexible Electronics ACS Nano (In press)
2. L. Liao, J. W. Bai, R. Chen, H. L. Zh... 阅读全帖 |
|
P*****l
发帖数: 438 | 37 How many people in this article are in trouble now ?
Tiny transistor breaks new limits
Thursday, 18 October, 2001, 14:03 GMT 15:03 UK
Bell Labs also built the first ever transistor in 1947
Scientists in the US may have paved the way towards working molecular
computers.
A group of researchers at Bell Labs have made tiny functioning transistors a
million times smaller than a grain of sand.
Making large quantities of the tiny components should be straightforward
because they self-assemble.
But rese... 阅读全帖 |
|
g********e
发帖数: 1638 | 38 213 张韵
(CS, CVD) 男 1982/09/22 中国科学院半导体研究所 工程与材料科学
2011年07月毕业于[美国]佐治亚理工学院 [美国]高平公司 工艺研发工程师
/Process Development Engineer
个人linkedin信息：
http://www.linkedin.com/pub/yun-%E5%BC%A0%E9%9F%B5-z/13/ab2/7b3
博士老板的主页bublicaion：
http://users.ece.gatech.edu/~shensc/publications.html
其中属于本千青的文章只有：（只有一个APL还OK）
S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J. Ryou, and R. D. Dupuis, "
Comparison of GaN avalanche photodiodes fabricated on SiC and GaN substrates
," ECS Transactions, vol. 11, ... 阅读全帖 |
|
l******h
发帖数: 2 | 39 Highly reputational company with very competitive compensation for all
positions.
Please send in your resume and position/positions you like to apply to my
email address below.
h*******[email protected]
All resumes will be deliver to hiring manager directly. Act fast!
Thanks!
Silicon Engineering Group
Sr. Physical Design Timing Engineer
Timing (STA) Manager
Senior Physical Design Engineer
CAD Manager - Front-End Design and Verification
Sr. CAD Engineer - Place & Route / Physical Design Engineer
Sr. CA... 阅读全帖 |
|
l******h
发帖数: 2 | 40 Highly reputational company with very competitive compensation for all
positions.
Please send in your resume and position/positions you like to apply to my
email address below.
h*******[email protected]
All resumes will be deliver to hiring manager directly. Act fast!
Thanks!
Silicon Engineering Group
Sr. Physical Design Timing Engineer
Timing (STA) Manager
Senior Physical Design Engineer
CAD Manager - Front-End Design and Verification
Sr. CAD Engineer - Place & Route / Physical Design Engineer
Sr. CA... 阅读全帖 |
|
r*********d
发帖数: 196 | 41 替人转发，请直接联系下面邮箱。谢谢。
University of Delaware电子工程系微电子专业正在招收一名博士生和一名博士后，有
意者请发送Email联系，地址：[email protected]。要求具有材料，半导体物理与器件基
础和相关经验，具体科研方向见下面要求:
(1) high speed transistors (heterojunction bipolar transistors and high
electron mobility transistors); (2) novel transistors (tunneling field
effect transistors and III-V metal-oxide-semiconductor field effect
transistors); and (3) light emitting diodes, laser diodes, photodetectors,
etc. |
|
a******e
发帖数: 331 | 42 *********An article on this
If ever EDA needed a ($700M) proof point on their value...
February 2, 2011
As I reported yesterday, Intel announced that a “design error” in a SATA
I/O support chip for the Sandy Bridge processor would cause them to
respin the design… at a cost of $700M! From the information that Intel
provided, it was apparent to me that the problem was most likely a
voltage domain error, i.e. a low voltage device got accidentally hooked
up to a higher voltage supply than it was sp... 阅读全帖 |
|
发帖数: 1 | 43 What Happened To GaN And SiC?
Early predictions were overly optimistic, but these technologies are
starting to make inroads.
About five years ago, some chipmakers claimed that traditional silicon-based
power MOSFETs had hit the wall, prompting the need for a new power
transistor technology.
At the time, some thought that two wide-bandgap technologies—gallium
nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace
the ubiquitous power MOSFET. In addition, GaN and SiC were suppos... 阅读全帖 |
|
